Abstract:Electrochemical etching of silicon carbide (SiC) material has received increasing attention in recent years, due to its simple procedure, low cost and significance in the exploration of novel optoelectronic devices. In this paper, 4H-SiC substrates were electrochemically etched at a constant current density of 392.98 mA cm-2 in an electrolyte made up of hydrofluoric acid and deionized water. The layering of a SiC porous layer and periodic fluctuation of the voltage were witnessed for the first time, with the layering phenomenon corresponding well to the voltage period. However, no such phenomenon was observed when the SiC substrates were anodic etched under the same conditions with magnet stirring. As a result, the periodic variation of voltage was hypothesized to be the cause of regular layering during constant current electrochemical etching. Electrochemical etching in potentiostatic mode was thus performed at different voltages. We found that the diameter of the SiC nanopores increased while the thickness of the sidewall decreased with the increasing voltage. Based on the experimental findings, a model of mass transport was proposed. The mass transport process leads to periodic changes in resistance, hence the periodic change in voltage. This successfully explained the reason for the layering. Furthermore, SiC substrates were also electrochemically etched at high and low current densities, finding the existence of a threshold current density for the occurrence of the layering. Energy dispersive x-ray spectroscopy analysis showed that the composition of the SiC porous layer remained unchanged compared to the pure SiC wafer, implying that the peeling-off of the SiC porous layer obtained by electrochemical etching can be directly adopted for use on devices requiring a SiC porous structure.

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The Technology of Using Porous Silicon As a Sacrificial Layer in MEMS

Etching Rate Of Sacriflcial Layer In Nanometer

Investigation of Selectively Forming Porous Silicon Used in MEMS

A Surface Micromachining Process for Suspended RF-MEMS Applications Using Porous Silicon

Analysis and Design of an Accelerometer Fabricated with Porous Silicon as Sacrificial Layer

Sacrificial Layer Technology in MEMS

An innovative methodology for monitoring the sacrificial layer removal process in MEMS structures

Design of Μpemfc Fabricated with Porous Silicon

Investigation of Selectively Forming Nano-Porous Silicon for the Application of MEA

Preparation of Sacrificial Layer for MEMS Devices by Lift-off Technology

Study of Polyimide As Sacrificial Layer with O-2 Plasma Releasing for Its Application in Mems Capacitive Fpa Fabrication

A Study on the Surface Modification of a Specialized Porous Silicon Membrane

Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching

Silicon-based MEMS Fabrication Techniques and Standardization

Fabrication of SiCN MEMS by UV Lithography of Polysilazane

Study on Silicon Deep Wet Etching Technology for MEMS

Fabricating Processes Of Free-Standing Silicon Nitride Thin Film For Mems Devices

Electroless Copper Plating on Silicon Surface for Mems

Fabrication Planar Coil on Oxide Membrane Hollowed with Porous Silicon As Sacrificial Layer