Fabrication Planar Coil on Oxide Membrane Hollowed with Porous Silicon As Sacrificial Layer

ZW Liu,Y Ding,LT Liu,ZJ Li
DOI: https://doi.org/10.1016/s0924-4247(03)00377-7
2003-01-01
Abstract:This paper presents the preparation process of large area hollowed structure used for suspended planar inductor for CMOS compatible radio frequency (RF) circuits. Porous silicon (PS) is used as sacrificial layer, and SiO2 film is used as a support membrane. After aluminium coil structure fabrication an array of 4μm×8μm releasing holes is opened on the membrane. Tetramethyl ammonium hydroxide (TMAH) solution with additional Si powder and (NH4)2S2O8 is used to remove the PS layer through small releasing holes without eroding the uncovered Al. A 4nH aluminium suspended inductor is obtained on a 450μm×425μm membrane hollowed with PS sacrifice method.
What problem does this paper attempt to address?