Design and Simulation of Si-Based MEMS Inductor

ZHANG Baiyu,GAO Jianjun,YAN Na
DOI: https://doi.org/10.3969/j.issn.1005-9490.2013.02.004
2013-01-01
Abstract:RF inductor based on micro-electromechanical systems(MEMS)technology plays a key role in high quality factor(Q)microwave integrated circuits due to its small volume,low power dissipation and high integration density.In this paper,advanced design technique of Si-based MEMS inductor is introduced,three common-used equivalent circuit models are given.High Frequency Structure Simulator(HFSS)has been used to design two 3-Dimension MEMS inductors(planar structure and vertical structure),the corresponding model parameter extraction procedures are made.The fabrication process for the MEMS inductors on N-type silicon substrate are given also.The planar inductor exhibits a maximum quality factors of 11.8 at 4.4 GHz,and the vertical inductor exhibits a maximum quality factors of 19.5 at 4.3 GHz,which are much better than the quality factors of conventional inductors.
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