Abstract:The microstructural properties of nitrogenated hydrogenated amorphous carbon (a-C:H:N) thin films deposited using a chemical vapour deposition system are analysed in order to evaluate their impact on the opto-electronic properties. Electron energy loss spectroscopy is used to reconstruct a joint density of states (JDOS) for the a:C:H:N films and thus used to examine the microstructure, Information obtained from optical absorption is then used to confirm the JDOS. Using this JDOS we attempt to predict the variation expected in the electronic conduction as a function of nitrogen content. The electrical data obtained for the a:C:H:N thin films appear to be bulk controlled as opposed to metal contact dominated for films that an deposited on the driven electrode and are more diamond-like in character. The bulk electronic properties at high fields an fitted to different types of conduction behaviour in order to obtain the best tits to the data, From this study it is observed that a Poole-Frenkel type fit is best for films chat have a diamond-like structure, For the films that have a polymeric structure which are deposited on the earthed electrode the conductivities are very much lower, and consistent with the lower defect densities observed in the microstructural study, It is possible that the conduction in these films are Schottky barrier controlled, (C) 1998 Elsevier Science S.A, All rights reserved.

Study of a-C:H(N) films by low energy positron beam

Characterization of A-C:H:n Deposition from CH4/N2 Rf Plasmas Using Optical Emission Spectroscopy

Electron Field Emission Studies from Amorphous Carbon Thin Films

The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films

Investigation into the Characteristics of A-C: H Films Radiated by an Electron Beam

Investigation of carbon nitride films by cathodic arc evaporation

Ion beam synthesis of C-N crystalline film and its analysis

Micro-Raman spectroscopy studies of as-deposited and furnace-annealed a-SiNx:H films

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Field emission from a-C:H and a-C:H:N

Nitrogenated Amorphous Carbon As a Semiconductor

BN Films Deposited by HFPECVD and the Mechanism of the Process

Self-texturing of nitrogenated amorphous carbon thin films for electron field emission

Ion-beam-assisted Deposition of CNx Films

Nmr-Studies of Hydrogen Microstructures in Hydrogenated Amorphous-Silicon Films

Investigation into the Characteristics of A-C:H Films Irradiated by Electron Beam

Characterization of sp2/sp3 hybridization ratios of hydrogenated amorphous carbon films deposited in C2H2 inductively coupled plasmas

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Synthesis of Carbon Nitride Films by Arc-Heated Atomic Nitrogen Beams Assisted Pulsed Laser Ablation