Abstract:The adoption of a feasible bump shape exerts a significant impact on the functionality of a 3D IC. The cylindrical bump structure, considered among the most prevalent shape, endures significant delay, power loss and crosstalk challenges. The tapered based TSV-bump structure recently acquired prominence due to their ultra-low fraction of volume and coupling, resulting in significant alleviation of delay and crosstalk issues. The electrical RLGC modeling has been accomplished for cylindrical, barrel, hourglass and the tapered bump structures along with the impact of coupling, passivation and fringing on the redistribution layer (RDL). In order to validate the proposed TSV bump structure, the quantitative values of a via is compared against the EM and experimental results, and a subsequent investigation have been accomplished for the propagation delay, power dissipation, peak noise, insertion and reflection losses. The proposed via bump structure is remarkable consistence with the experimental results with an average deviation of only 3.51%. In addition, the Finite difference time-domain (FDTD) electromagnetic computation is employed to further examine the performance characteristics. Furthermore, it is worth emphasizing that the tapered bump structure can effectively reduce the propagation delay, power dissipation, peak noise, insertion and reflection losses with an average deviation of 34.83%, 28.62%, 29.98%, 13.57%, and 41.06%, respectively, when compared to the barrel, cylindrical and hourglass bumps.

Simulation-based investigation in effects of design parameters on electrical characters for a TSV-bump combination

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Electrothermal modelling of through silicon via (TSV) interconnects

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Electrical modeling, simulation and SPICE model extraction of TSVs in silicon interposer

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Electrical Modeling and Performance Analysis of Cu and CNT Based TSV-Bump-RDL

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Characteristics of Coupling Capacitance Between Signal-Ground TSVs Considering MOS Effect in Silicon Interposers