Abstract:Background Since 1984, WHO has endorsed drug treatment to reduce Schistosoma infection and its consequent morbidity. Cross-sectional studies suggest pre-treatment correlation between infection intensity and risk for Schistosoma-related pathology. However, evidence also suggests that post-treatment reduction in intensity may not reverse morbidity because some morbidities occur at all levels of infection, and some reflect permanent tissue damage. The aim of this project was to systematically review evidence on drug-based control of schistosomiasis and to develop a quantitative estimate of the impact of post-treatment reductions in infection intensity on prevalence of infection-associated morbidity. Methodology/Principal findings This review was registered at inception with PROSPERO (CRD42015026080). Studies that evaluated morbidity before and after treatment were identified by online searches and searches of private archives. Post-treatment odds ratios or standardized mean differences were calculated for each outcome, and these were correlated to treatment-related egg count reduction ratios (ERRs) by meta-regression. A greater ERR correlated with greater reduction in odds of most morbidities. Random effects meta-analysis was used to derive summary estimates: after treatment of S. mansoni and S. japonicum, left-sided hepatomegaly was reduced by 54%, right-sided hepatomegaly by 47%, splenomegaly by 37%, periportal fibrosis by 52%, diarrhea by 53%, and blood in stools by 75%. For S. haematobium, hematuria was reduced by 92%, proteinuria by 90%, bladder lesions by 86%, and upper urinary tract lesions by 72%. There were no consistent changes in portal dilation or hemoglobin levels. In sub-group analysis, age, infection status, region, parasite species, and interval to follow-up were associated with meaningful differences in outcome. Conclusion/Significance While there are challenges to implementing therapy for schistosomiasis, and praziquantel therapy is not fully curative, reductions in egg output are significantly correlated with decreased morbidity and can be used to project diminution in disease burden when contemplating more aggressive strategies to minimize infection intensity.

Reduced Perssure-Chemical Vapor Deposition of High Quality Ge Layers on SiGe/Si Superlayers for Microelectronics and Optoelectronics Purposes

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

The growth and quality evaluation of strained Si material with multilayer structure

Decline in infection-related morbidities following drug-mediated reductions in the intensity of Schistosoma infection: A systematic review and meta-analysis

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

High quality Ge layers for Ge/SiGe quantum well heterostructures using chemical vapor deposition

High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures

Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI

Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures