Study on RF MEMS Switch with Four Parallel Ohm Contacts for Power Handling Enhancement

Zewen Liu,Zhihao Hou,Zhijian Li
DOI: https://doi.org/10.1002/mop.25025
IF: 1.311
2010-01-01
Microwave and Optical Technology Letters
Abstract:In this article, we present a recent study on enhancement of the power handling capability in wideband Ohm contact type RF MEMS switch The series Ohm contact switch presents a very good wideband RF performance in the DC to 30 GHz To its power handling capability, switch unit consisted of four parallel single Ohm contact (FPOC) had been designed, fabricated and measured In this way, the power handling capability can be improved because of the reduction of contact resistance The measurement results reveal that the FPOC witch insertion loss is 0.1 dB at 4 GHz and 0.3 dB at 10 GHz its isolations are 25 dB at 4 GHz and -16 dB at 10 GHz (C) 2010 Wiley Periodicals. Inc Microwave Opt Technol Lett 52, 665-667. 2010, Published online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.25025
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