Design and fabrication of X-band capacitive MEMS switches

XiaoFeng Lei,Zewen Liu,Yun Xuan,Jia Wei,Zhijian Li,Litian Liu

DOI: https://doi.org/10.3969/j.issn.1005-9490.2005.03.004

2005-01-01

Abstract:Design and fabrication of a novel X-band capacitve RF MEMS switch is reported. The switch consists of a suspended metallic membrane supported by a like-coil structure over the coplanar waveguide. The equivalent inductance of the like-coil structure is 134 pH, which greatly decrease the off-state resonance frequency of the switch. The design is optimized based on a series of simulations, which is realized with commercial EDA tools. The simulations show that the proposed switch structure present better isolation than traditional switch in relative low RF frequency(X band). This switch is made using silicon surface micromachining process. On wafer measurement results have been carried out. The threshold voltage is less than 9 V, the insertion loss is 0.69 dB at 11.6 GHz, and the isolation is 27.7 dB at 11.6 GHz.