Design and Fabrication of a Capacitive Series RF MEMS Switch

HOU Zhi-hao,LIU Ze-wen,HU Guang-wei,LIU Li-tian,LI Zhi-jian

DOI: https://doi.org/10.3969/j.issn.1004-1699.2008.04.032

2008-01-01

Abstract:The design and fabrication of a capacitive series RF MEMS switch is reported.The up-electrode warps up under the residue stress,which increases the isolation of the capacitive series RF MEMS switch.The disadvantage of capacitive series RF MEMS switch,which only has high isolation at below 1 GHz,is overcome.The fabrication process is the same with capacitive shunt switch.Comparing with capacitive shunt switch,the fabricated capacitive series RF MEMS switch has the advantage in low frequency application(10 GHz).The insertion loss is-0.8 dB@3 GHz and-0.5 dB above 6 GHz;the isolation is-33.5 dB@900 MHz,-24 dB@3 GHz and-20 dB@5 GHz,which is suit for the application of frequency range from 3 GHz to 5 GHz.