Abstract:The lateral actuated switch requires an isolation structure to provide mechanical coupling and electrical isolation between the actuator and the contacts. This isolation structure usually imposes extra difficulty on the fabrication process. In previous reports, we demonstrated a thermal actuated lateral switch, where the nitride isolation structure was a weak point, leading to reliability problems. In this paper, we developed a modified switch utilizing undoped polysilicon as the isolation material. The undoped-polysilicon isolation structure requires only one extra step of sheltered implantation, and it provides robust mechanical connection. A 20-mum-long undoped-polysilicon isolation structure has a current leakage of less than 2 nA under a 15-V operation voltage. The proposed switch works under a 12-V driving voltage with 60-mW input power. The time response is measured to be 130 mus, and a maximum operation frequency of 4.5 kHz is reached. An ON-state insertion loss of -0.41 dB at 20 GHz and an OFF-state isolation of -20 dB at 20 GHz have been achieved on the normal low-resistivity silicon substrate. The undoped-polysilicon isolation method can be used in other surface-micromachined lateral switches as well.

A laterally thermally-actuated RF MEMS capacitive switch with parylene as dielectric layer

A Lateral RF MEMS Capacitive Switch Utilizing Parylene As Dielectric

Design and Fabrication of a Capacitive Series RF MEMS Switch

Design, optimization and simulation of a low-voltage shunt capacitive RF-MEMS switch

Design and fabrication of X-band capacitive MEMS switches

Intermodulation Distortion in MEMS Capacitive Switches under High RF Power

Design and Fabrication of a Low Insertion Loss Capacitive RF MEMS Switch with Novel Micro-Structures for Actuation

High-isolation lateral RF MEMS capacitive switch based on HfO2 dielectric for high frequency applications

High Isolation X-band MEMS Capacitive Switches

A Low-Supply-voltage High-Power-handling Stacked SPDT Switch Based on Feedforward Capacitors.

Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Development and Modeling of a Wafer-Level BCB Packaging Method for Capacitive RF MEMS Switches

Design and Modeling of a Continuously Variable Piezoelectric RF MEMS Switch

Study on dynamic characterization of a shunt capacitive RF MEMS switch

An Ultra-Broadband Contact-Capacitive RF MEMS Switch for 15-110GHZ Applications

An Analytical Model for High Performance Capacitive RF MEMS Switch Design

A Highly Reliable Lateral MEMS Switch Utilizing Undoped Polysilicon As Isolation Material

Scalable Contact-Capacitive MEMS Switches with High Capacitance Ratio for Millimeter-Wave Applications

A Novel 3-resonance Capacitive RF MEMS Switch

Electro-thermally actuated RF MEMS switch for wireless communication.