A CMOS SPDT RF Switch with 68 Db Isolation and 1.0 Db Loss Feathering Switched Resonance Network for MIMO Applications

Xi Fu,Yun Wang,Zheng Li,Atsushi Shirane,Kenichi Okada
DOI: https://doi.org/10.1587/transele.2020cdp0004
2021-01-01
IEICE Transactions on Electronics
Abstract:XThere are enlarged requirements of millimeter-wave beamforming phased-array transceivers and high-order modulation multi-input multi-output (MIMO) transceivers. High-performance integrated RF switches are regarded as one of the most critical components for those transceivers to support signal channel distribution and path redundancy. This paper introduces a CMOS high-isolation and low-loss RF switch with a novel switched parallel LC resonance network. The proposed single-pole double-throw (SPDT) RF switch realizes 68 dB port isolation and 1.0 dB insertion loss with an active area of 0.034mm(2). The SPDT RF switch is composed of two series-shunt transistor pairs with body-floating technology and a switched parallel LC network. The network uses a turned-off series transistor to resonate out off-capacitance C-off. The measured output third-order intercept (OIP3) is higher than 21 dBm. The proposed SPDT RF switch maintains return losses of all working ports less than 10 dB from 8 GHz to 20 GHz. The high-performance SPDT RF switch is fabricated in standard 65-nm CMOS technology.
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