Ultra Low Loss and High Linearity RF Switch Using 130nm SOI CMOS Process

Hongwei Zhu,Qiuliang Li,Hao Sun,Zhipeng Wang,Ran Liu,Yi Liu
DOI: https://doi.org/10.1109/asicon.2017.8252571
2017-01-01
Abstract:Ultra low insertion loss and high linearity RF switch is designed and implemented using 130nm RF SOI CMOS process .The FOM of Ron*Coff is touching 115fs and trending below of it. Measurement results demonstrate a low harmonic distortion single-pole double-throw (SPDT) symmetry T/R switch with insertion loss of 0.25dB/0.3dB and isolation of 29.9dB/22.3dB for the low/high of 900MHz and 1.9GHz mobile handset bands. The measured P1dB is greater than 35dBm and at 900MHz lower band, the 2nd and 3nd harmonics are as low as -90.8dBc and -85.8dBc at 35dBm input power.
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