Fabrication of GaAs/AlGaAs high electron mobility transistors with 250 nm gates using conformal phase shift lithography

Junmin Hu,Tao Deng,Rex G Beck,Robert M Westervelt,Kevin D Maranowski,Arthur C Gossard,George M Whitesides
DOI: https://doi.org/10.1016/S0924-4247(00)00435-0
2000-01-01
Abstract:This paper establishes the feasibility of soft lithography for fabrication of submicron-scale electronic devices. Near-field conformal phase shift lithography - a representative soft lithographic technique - was used on a broadband exposure tool to fabricate the gate fingers of a high electron mobility transistor (HEMT), The gates of this proof-of-concept device had lengths of 250 nm and widths of 40 mum The device had a transconductance of 4 mS and a current-voltage response similar to that of a conventional HEMT. (C) 2000 Elsevier Science B.V. All rights reserved.
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