Abstract:Imprint lithography is an effective and well known technique for replication of nano-scale features. Nanoimprint lithography (NIL) manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. The technology faithfully reproduces patterns with a higher resolution and greater uniformity compared to those produced by photolithography equipment. Additionally, as this technology does not require an array of widediameter lenses and the expensive light sources necessary for advanced photolithography equipment, NIL equipment achieves a simpler, more compact design, allowing for multiple units to be clustered together for increased productivity. Previous studies have demonstrated NIL resolution better than 10nm, making the technology suitable for the printing of several generations of critical memory levels with a single mask. In addition, resist is applied only where necessary, thereby eliminating material waste. Given that there are no complicated optics in the imprint system, the reduction in the cost of the tool, when combined with simple single level processing and zero waste leads to a cost model that is very compelling for semiconductor memory applications. Any new lithographic technology to be introduced into manufacturing must deliver either a performance advantage or a cost advantage. Key technical attributes include alignment, overlay and throughput. In previous papers, overlay and throughput results have been reported on test wafers. In this work, improvements to the alignment system, together with the High Order Distortion Correction (HODC) system have enabled better distortion and overlay results on both test wafers and device wafers. On test wafers, XMMO of 2.9nm and 3.2nm in x and y respectively was demonstrated. SMO of 2.2nm and 2.4nm was achieved, with an opportunity to further improve results by applying wafer chucks with better flatness specifications. Comparable results were also achieved on device wafers by applying a multi-wavelength alignment strategy and a feed forward strategy to realize align signal convergence within the allocated 0.60 second budget.

A composite algorithm of lithography process in AlGaN/GaN-on-SiC HEMTs manufacturing

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Nitride Spacer Aided 0.15 Μm AlGaN/GaN HEMT Fabrication with Optimized Gate Patterning Process

Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching

AI‐assisted Field Plate Design of GaN HEMT Device

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

Patterning, mask life, throughput and overlay improvements for high volume semiconductor manufacturing using nanoimprint lithography

Process Characterization and Control of Polycrystalline SiGe As the Gate Electrode in CMOS Fabrication

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

From Computational Lithography to Computational Inspection: Inverse Lithography Technology (ILT) and Inverse Inspection Technology (IIT)

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

High Quality and Uniformity Gan Grown on 150 Mm Si Substrate Using In-Situ Nh3 Pulse Flow Cleaning Process

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment

Nanoimprint system alignment and overlay improvement for high volume semiconductor manufacturing

Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates

Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection

High Performance AlGaN/GaN HEMTs by Supercritical Fluid

Investigation of the Trap States and V Th Instability in Normally-Off GaN MIS-FETs with LPCVD SiNx/PEALD AlN Gate Dielectric Stack and in Situ H2/N2 Plasma Pretreatment