Abstract:In this paper, a chemical adsorption model for hot filament chemical vapor deposition (NF-CVD) of diamond films has been proposed based on some recent experimental data. The coverages of H and CH3 precursors on the growing surface have been calculated according to the equilibrium between the adsorption and desorption of the two precursors at a certain substrate temperature T-g. The result shows that the H coverage decreases markedly with increasing T-s when T-s is over a critical temperature T-c. Below the temperature T-c, it comes close to 1. Thus, the quality deterioration of diamond films deposited at rather high substrate temperatures may be attributed to the poor H coverage on the surface. The value of T-c is determined by H atom concentration n(H) in the reactor. When n(H) is greater than 3.2 x 10(-11) mol cm(-3), T-c is above 1000 K. The CH3 coverage shows a maximum within the range of the studied T-s. With the typical CH3 concentrations, the CH3 coverage reaches the maximum at T-s similar to 1100 K. A growth rate formula has been developed on the basis of the temperature dependent CH3 coverage. The formula shows that the growth rate follows the Arrhenius law at relative low T-s, but it rapidly decreases when T-s is rather high, which is in good agreement with the experimental results. (C) 2000 Elsevier Science S.A. All rights reserved.

Evaluation of the Growth Condition of Chemical Vapour Deposition Diamond under Fluorine Addition

Low Pressure Growth of Diamond Films under Fluorine Addition

Effects of Fluorine Addition on Driving Force for CVD Diamond Growth

Phase diagrams for low pressure diamond synthesis in carbon-hydrogen-fluorine system

Phase Diagrams for Cvd Diamond Deposition from Halogen-Containing Gas Phase

Thermodynamic Analysis for Chemical Vapor Deposition Diamond with the Participation of Chlorine

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Thin Film Growth Conditions for Cvd Diamond under Low Pressure

Deposition conditions for CVD diamond films under low pressure with nitrogen addition

Phase diagrams in C-H-N system for low pressure CVD diamond growth

Effects of temperature and pressure on CVD diamond growth from the C-H-O system

A Chemical Adsorption Growth Model For Hot Filament Chemical Vapor Deposition Diamond

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

The Functions of Halogen in CVD Diamond Thin Film Deposition Process

Thermodynamics of diamond film deposition at low pressure from chlorinated precursors

Effect of Pressure on the Growth of Boron and Nitrogen Doped HFCVD Diamond Films on WC–Co Substrate

Calculation of phase diagram for diamond growth in C-H-Cl system

First-principles Studies of the Effect of H and F Decoration on the Growth of Silicon Vacancy on (100) Surface in Diamond

Thermodynamic Analysis for Vapor-Grown Diamond

Thermodynamics Analyses of the Effect of CH 3 and C 2 H 2 on Morphology of CVD Diamond Films

Estimation of the Minimum and Maximum Substrate Temperatures for Diamond Growth from Hydrogen-Hydrocarbon Gas Mixtures