Abstract:Concurrently achieving high growth rate and high quality in single-crystal diamonds (SCDs) is significantly challenging. The growth rate of SCDs synthesized by microwave plasma chemical vapor deposition (MPCVD) was enhanced by introducing N2 into the typical CH4-H2 gas mixtures. The impact of nitrogen vacancy (NV) center concentration on growth rate, surface morphology, and lattice binding structure was investigated. The SCDs were characterized through Raman spectroscopy, photoluminescence (PL) spectroscopy, and X-ray photoelectron spectroscopy. It was found that the saturation growth rate was increased up to 45 μm/h by incorporating 0.8–1.2% N2 into the gas atmosphere, which is 4.5 times higher than the case without nitrogen addition. Nitrogen addition altered the growth mode from step–flow to bidimensional nucleation, leading to clustered steps and a rough surface morphology, followed by macroscopically pyramidal hillock formation. The elevation of nitrogen content results in a simultaneous escalation of internal stress and defects. XPS analysis confirmed chemical bonding between nitrogen and carbon, as well as non-diamond carbon phase formation at 0.8% of nitrogen doping. Furthermore, the emission intensity of NV-related defects from PL spectra changed synchronously with N2 concentrations (0–1.5%) during diamond growth, indicating that the formation of NV centers activated the diamond lattice and facilitated nitrogen incorporation into it, thereby accelerating chemical reaction rates for achieving high-growth-rate SCDs.

Thin Film Growth Conditions for Cvd Diamond under Low Pressure

Deposition conditions for CVD diamond films under low pressure with nitrogen addition

Phase diagrams in C-H-N system for low pressure CVD diamond growth

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Influence of CVD diamond growth conditions on nitrogen incorporation

Phase Diagrams for Cvd Diamond Deposition from Halogen-Containing Gas Phase

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Series of non-equilibrium stationary phase diagrams on diamond growth under different pressures of C-H system

High nitrogen amounts incorporated diamond films deposited by the addition of nitrogen in a hot-filament CVD system

Effect of Nitrogen on Growth and Optical Properties of Single-Crystal Diamond Synthesized by Chemical Vapor Deposition

Phase diagrams for activated CVD diamond growth

Utilization Of Non-Equilibrium Stationary Phase Diagrams In C-H-N Systems Diamond Deposition

Evaluation of the Growth Condition of Chemical Vapour Deposition Diamond under Fluorine Addition

A Kinetic Model for the Initial Growth of Diamond Films

Pressure Effect On Diamond Nucleation In A Hot-Filament Cvd System

Effects of temperature and pressure on CVD diamond growth from the C-H-O system

Low Pressure Growth of Diamond Films under Fluorine Addition

Nano-crystalline Diamond Films Synthesized at Low Temperature and Low Pressure by Hot Filament Chemical Vapor Deposition

A Theoretical Study on Dopants Substituted on the H-terminated Surface Regulating the Threshold Concentration of Nitrogen for Accelerating Diamond Growth

Achieving High Nucleation Density of Diamond Film under Low Pressures in Hot-Filament Chemical Vapor Deposition

Nitrogen Adsorption Induced Surface Kinetics Changes of Diamond Growth by Microwave Plasma Cvd