Abstract:According to roles of atomic hydrogen, methyl and acetylene in diamond film chemical vapor deposition (CVD) in C–H and C–H–O systems, two micro parameters and their criteria were established, viz., methyl mole fraction [CH3] and ratio of atomic hydrogen mole fraction to acetylene [H]/[C2H2], corresponding to the growth of diamond and etching of non-diamond carbon, respectively. By simulating gas-phase chemistry in C–H–N environment, equilibrium compositions for various nitrogenous mixtures were obtained. A C–H–N ternary phase diagram for diamond chemical vapor deposition under low pressure was constructed and influence of activation temperature on diamond domain was calculated. They were proved basically logical by over eighty experimental points in literatures, confirming the dominant roles of H, CH3 and C2H2. It is indicated that atomic hydrogen is not replaced by atomic nitrogen in preferably etching non-diamond carbon and generating surface growth sites. Further calculation and discussion reveals that nitrogen addition not only influences the concentrations of atomic hydrogen, methyl and acetylene, but also produces CN radicals, which actively participate in surface reactions, resulting in strong dependence of deposition rate and quality on nitrogen addition amount.

Phase diagrams in C-H-N system for low pressure CVD diamond growth

Phase Diagrams for Cvd Diamond Deposition from Halogen-Containing Gas Phase

Utilization Of Non-Equilibrium Stationary Phase Diagrams In C-H-N Systems Diamond Deposition

Thin Film Growth Conditions for Cvd Diamond under Low Pressure

Construction and Analysis of C–H–N Phase Diagram for Diamond Chemical Vapor Deposition by Simulation of Gas-Phase Chemistry

Calculated phase diagrams for activated low pressure diamond growth from C–H, C–O, and C–H–O systems

Phase diagrams for low pressure diamond synthesis in carbon-hydrogen-fluorine system

Phase diagrams for activated CVD diamond growth

Series of non-equilibrium stationary phase diagrams on diamond growth under different pressures of C-H system

Deposition conditions for CVD diamond films under low pressure with nitrogen addition

Projective Phase Diagrams for CVD Diamond Growth from C–H and C–H–O Systems

Low Pressure Growth of Diamond Films under Fluorine Addition

Phase diagram calculation of diamondgrowth from low pressure gases

Calculation of diamond phase diagrams in the CO/H2 system under low pressure

Effects of temperature and pressure on CVD diamond growth from the C-H-O system

Calculation of phase diagram for diamond growth in C-H-Cl system

C-H system low-pressure diamond growth condition influenced by activation temperature

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Thermodynamic analysis of phase diagram for diamond growth from methane-hydrogen gas mixture

Thermodynamic Analysis for Chemical Vapor Deposition Diamond with the Participation of Chlorine

Non-equilibrium Phase Diagram of Stationary States for Low-Pressure Diamond Growth