Abstract:According to roles of atomic hydrogen, methyl and acetylene in diamond film chemical vapor deposition (CVD) in C–H and C–H–O systems, two micro parameters and their criteria were established, viz., methyl mole fraction [CH3] and ratio of atomic hydrogen mole fraction to acetylene [H]/[C2H2], corresponding to the growth of diamond and etching of non-diamond carbon, respectively. By simulating gas-phase chemistry in C–H–N environment, equilibrium compositions for various nitrogenous mixtures were obtained. A C–H–N ternary phase diagram for diamond chemical vapor deposition under low pressure was constructed and influence of activation temperature on diamond domain was calculated. They were proved basically logical by over eighty experimental points in literatures, confirming the dominant roles of H, CH3 and C2H2. It is indicated that atomic hydrogen is not replaced by atomic nitrogen in preferably etching non-diamond carbon and generating surface growth sites. Further calculation and discussion reveals that nitrogen addition not only influences the concentrations of atomic hydrogen, methyl and acetylene, but also produces CN radicals, which actively participate in surface reactions, resulting in strong dependence of deposition rate and quality on nitrogen addition amount.

Phase diagram calculation of diamondgrowth from low pressure gases

Thermodynamic Analysis for Vapor-Grown Diamond

Thermodynamic analysis of phase diagram for diamond growth from methane-hydrogen gas mixture

Calculation of diamond phase diagrams in the CO/H2 system under low pressure

Phase diagrams for activated CVD diamond growth

Calculated phase diagrams for activated low pressure diamond growth from C–H, C–O, and C–H–O systems

Phase Diagrams for Cvd Diamond Deposition from Halogen-Containing Gas Phase

Phase diagram for diamond growth in atmospheric oxyacetylene flames

Gowth conditions for diamond synthesis in atmosphere oxyacetylene flames

Series of non-equilibrium stationary phase diagrams on diamond growth under different pressures of C-H system

Projective Phase Diagrams for CVD Diamond Growth from C–H and C–H–O Systems

Phase diagrams in C-H-N system for low pressure CVD diamond growth

Calculation of phase diagram for diamond growth in C-H-Cl system

Phase diagrams for low pressure diamond synthesis in carbon-hydrogen-fluorine system

Utilization Of Non-Equilibrium Stationary Phase Diagrams In C-H-N Systems Diamond Deposition

A new field of phase diagrams of stationary nonequilibrium states

Non-equilibrium Phase Diagram of Stationary States for Low-Pressure Diamond Growth

Thermodynamic prediction of deposition parameters for diamond synthesis in atmospheric oxyacetylene flames

Construction and Analysis of C–H–N Phase Diagram for Diamond Chemical Vapor Deposition by Simulation of Gas-Phase Chemistry

Effects of temperature and pressure on CVD diamond growth from the C-H-O system

Simulation of gas phase chemistry in C-H-O and C-H-N systems for chemical vapor deposition diamond films