Abstract:According to roles of atomic hydrogen, methyl and acetylene in diamond film chemical vapor deposition (CVD) in C–H and C–H–O systems, two micro parameters and their criteria were established, viz., methyl mole fraction [CH3] and ratio of atomic hydrogen mole fraction to acetylene [H]/[C2H2], corresponding to the growth of diamond and etching of non-diamond carbon, respectively. By simulating gas-phase chemistry in C–H–N environment, equilibrium compositions for various nitrogenous mixtures were obtained. A C–H–N ternary phase diagram for diamond chemical vapor deposition under low pressure was constructed and influence of activation temperature on diamond domain was calculated. They were proved basically logical by over eighty experimental points in literatures, confirming the dominant roles of H, CH3 and C2H2. It is indicated that atomic hydrogen is not replaced by atomic nitrogen in preferably etching non-diamond carbon and generating surface growth sites. Further calculation and discussion reveals that nitrogen addition not only influences the concentrations of atomic hydrogen, methyl and acetylene, but also produces CN radicals, which actively participate in surface reactions, resulting in strong dependence of deposition rate and quality on nitrogen addition amount.

Phase diagram for diamond growth in atmospheric oxyacetylene flames

Gowth conditions for diamond synthesis in atmosphere oxyacetylene flames

Thermodynamic prediction of deposition parameters for diamond synthesis in atmospheric oxyacetylene flames

Phase diagram calculation of diamondgrowth from low pressure gases

Thermodynamic Analysis for Vapor-Grown Diamond

Phase diagrams for low pressure diamond synthesis in carbon-hydrogen-fluorine system

Calculated phase diagrams for activated low pressure diamond growth from C–H, C–O, and C–H–O systems

Thermodynamic analysis of phase diagram for diamond growth from methane-hydrogen gas mixture

Phase diagrams for activated CVD diamond growth

Calculation of diamond phase diagrams in the CO/H2 system under low pressure

Phase Diagrams for Cvd Diamond Deposition from Halogen-Containing Gas Phase

Simulation of Carbon Deposition Conditions in a Methane or Acetylene Flame Based on Mechanisms of Chemical Transport Reaction

Phase diagrams in C-H-N system for low pressure CVD diamond growth

Construction and Analysis of C–H–N Phase Diagram for Diamond Chemical Vapor Deposition by Simulation of Gas-Phase Chemistry

Projective Phase Diagrams for CVD Diamond Growth from C–H and C–H–O Systems

Effects of temperature and pressure on CVD diamond growth from the C-H-O system

Estimation of the Minimum and Maximum Substrate Temperatures for Diamond Growth from Hydrogen-Hydrocarbon Gas Mixtures

Spectroscopic Determination of Rotational Temperature in C2H4/C2H2/O2 Flames for Diamond Growth with and Without Tunable CO2 Laser Excitation.

Low Pressure Growth of Diamond Films under Fluorine Addition

Thermodynamic Analyses on (111) and (100) Facets Orientation Growth of CVD Diamond Film

Effects of activation temperature on diamond growth in C-H, C-O and C-H-O system under low temperature