Thermodynamics of diamond film deposition at low pressure from chlorinated precursors

Z.-J. Liu,D.W. Zhang,Y.-Z. Wan,J.-Y. Zhang,J.-T. Wang

DOI: https://doi.org/10.1007/s003390050904

1999-01-01

Abstract:3 and C 2 H 2 concentrations at growth surface and accelerating abstraction of surface-terminating atoms. The effects of Cl addition on diamond film quality are also discussed.

What problem does this paper attempt to address?

Thermodynamic Analysis for Chemical Vapor Deposition Diamond with the Participation of Chlorine

ZJ Liu,W Zhang,JY Zhang,YZ Wan,JT Wang,CB Cao,HS Zhu

1999-01-01

Abstract:Diamond growth condition for C-H-CI system is studied by using the non-equilibrium thermodynamic coupling model. The phase diagram for diamond growth is calculated, which is in good agreement with many reported experiments, The experimental observation that diamond film may grow at a higher rate under low temperature and have better qualities due to the addition of chlorine is also discussed according to the thermodynamic analysis.
Thermodynamics Analyses of the Effect of CH 3 and C 2 H 2 on Morphology of CVD Diamond Films

Jianyun Zhang,Pengfei Wang,Shi‐Jin Ding,David Wei Zhang,Jitao Wang,Zhijie Liu

DOI: https://doi.org/10.1016/s0040-6090(00)00779-3

IF: 2.1

2000-01-01

Thin Solid Films

Abstract:CH3 and C2H2 are the dominant growth precursors during chemical vapor deposition diamond process. The ratio of C2H2 to CH3 concentration will affect the growth orientation of diamond film. In this paper the dependence of C2H2 and CH3 concentrations on substrate temperature is calculated under 4 kPa pressure according to a non-equilibrium thermodynamic coupling model reported previously. The concentrations of C2H2 and CH3 increase when the substrate temperature rises. C2H2 concentration rises more highly. The dependence of the ratio of C2H2 to CH3 concentration ([C2H2]/[CH3]) on substrate temperature is also calculated. Diamond (111) and (100) facets growth is discussed with the ratio of C2H2 to CH3 concentration under various substrate temperatures and CH4 concentrations. With the increase of substrate temperature or CH4 concentration, the value of [C2H2]/[CH3] will rise. So the growth rate of diamond (111) facets controlled by C2H2 concentration is higher than that of diamond (100) facets controlled by CH3, and thus (100) facets appear. These results are well consistent with many experiments reported by other researchers.
Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

H Zhang,Tl Hao,Cr Shi,Gr Han

DOI: https://doi.org/10.3321/j.issn:1001-9014.2006.02.001

2006-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:The diamond nucleation and growth on Si substrate by hot filament chemical vapor deposition (HFCVD) at the low temperature ( similar to 550 degrees C) and low pressure ( similar to 7 Torr) were studied. Nucleation density (ND) as high as 1. 5 x 10(11) cm(-2) was obtained on well ultrasonically pretreated substrate at the nucleation conditions of 2.5% CH4/H-2. Diamond grain sizes change form sub-micron to nano-meter scales with the increase of CH4 concentration. Smooth ultra-thin ( thickness < 500 nm) nano-crystalline diamond (NCD) films with grain sizes less than 50 nm and surface roughness as low as 4 nm have been synthesized. The adhesion between the film and substrate is good. The optical absorption coefficient in visible ( VIS) to infrared (IR) wavelength range is less than 2 X 10(4) cm(-1). Smooth ultra-thin NCD films can be synthesized at low temperature and low pressure by our conventional HFCVD technique.
Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Xingbo Liang,Lei Wang,Hongliang Zhu,Deren Yang

DOI: https://doi.org/10.1016/j.surfcoat.2007.05.032

IF: 4.865

2007-01-01

Surface and Coatings Technology

Abstract:The effect of pressure on the deposition of nanocrystalline diamond (NCD) films in a hot filament chemical vapor deposition (HFCVD) system was investigated employing a 1% CH4 in H2 gas mixture. With decreasing the growth pressure from 5.0 to 0.125 kPa, a gradual reduction of the diamond grain sizes from sub-micrometer to nanometer scale was observed, accompanied by the decline of surface roughness and the evolution of film cross-sectional morphologies changing from columnar to grainy structures. The pressure also exerted prominent influence on the film growth rate. At 2.8 kPa the growth rate featured a maximum, while decreasing to higher and lower pressures. Such pressure dependence of the diamond growth rate was suggested to result from two competing effects of pressure on the concentration of reactive species near the diamond growth surface. Further, the mechanism for the NCD film formation under low deposition pressures was discussed in light of the high secondary nucleation rate.
Phase Diagrams for Cvd Diamond Deposition from Halogen-Containing Gas Phase

ZJ Liu,DW Zhang,JY Zhang,YZ Wan,JT Wang

DOI: https://doi.org/10.1016/s0040-6090(98)01329-7

IF: 2.1

1999-01-01

Thin Solid Films

Abstract:Thermodynamics of diamond film deposition at low pressure from C (carbon)–H (hydrogen)–X (halogen) system has been studied according to a non-equilibrium thermodynamic coupling model proposed by Wang in previous papers. Projective and sectional temperature–gas composition phase diagrams of diamond growth are obtained. Diamond growth regions, which represent the constraints of temperature, pressure and gas composition suitable for diamond growth, are predicted in our phase diagrams. Diamond growth regions agree with many experimental data reported in the literature. Thermodynamic analyses show that the substrate temperature range suitable for diamond film deposition moves towards lower temperature with increasing X addition, and becomes narrower. The effect of system pressure on the diamond growth region is also discussed.
Evaluation of the Growth Condition of Chemical Vapour Deposition Diamond under Fluorine Addition

YZ Wan,DW Zhang,ZJ Liu,JY Zhang,JT Wang

DOI: https://doi.org/10.1016/s0254-0584(98)00172-2

IF: 4.778

1998-01-01

Materials Chemistry and Physics

Abstract:Effects of fluorine addition on the growth conditions of chemical vapour deposition (CVD) diamond are discussed in the light of thermodynamics. Phase diagrams in the C-H-F system for low-pressure diamond growth are calculated in the usual conditions: 0.1–6.67 kPa, 900–1100 K. The effects of substrate temperature and fluorine addition on the diamond growth region are explored. From these phase diagrams, we find that the diamond growth region is small and near the CH4-HF line at low temperature; it gradually moves to the H-HF line with increasing temperature.
Crystalline Diamond Growth in Thin Films Deposited from a CH4/Ar Rf Plasma

G AMARATUNGA,A PUTNIS,K CLAY,W MILNE

DOI: https://doi.org/10.1063/1.101808

IF: 4

1989-01-01

Applied Physics Letters

Abstract:Observation of single-crystal diamond growth in thin films obtained from the rf decomposition of a CH4/Ar plasma is reported. The films were deposited on Si substrates which were kept at 20 °C. Polycrystalline diamond grains are seen over the entire film. Single-crystal diffraction patterns obtained from larger grains all show {111} twinning.
Deposition conditions for CVD diamond films under low pressure with nitrogen addition

Zhijie Liu,Wei Zhang,JianYun Zhang,YongZhong Wan,JiTao Wang

DOI: https://doi.org/10.3321/j.issn:1000-324x.1999.01.019

IF: 1.292

1999-01-01

Journal of Inorganic Materials

Abstract:Non-equilibrium stationary phase diagrams for diamond growth with nitrogen addition into the reaction system were calculated and coordinate well with published experimental results. Therefore they can direct the experimental research on the subject. The effects of nitrogen addition on the deposition of diamond films were discussed by using the phase diagrams. The nitrogen addition can accelerate the deposition rate of diamond films in two aspects: enhance the CH3 concentration at the growth surface and accelerate the abstraction of H atoms covered the growth surface sites.
Thin Film Growth Conditions for Cvd Diamond under Low Pressure

JT Wang,ZJ Liu,DW Zhang,JY Zhang,YZ Wan

DOI: https://doi.org/10.1109/icsict.1998.786189

1998-01-01

Abstract:Non-equilibrium stationary phase diagrams for diamond growth with nitrogen addition into the reaction system were calculated and coordinate well with published experimental results. Therefore they can direct the experimental research on the subject. The effects of nitrogen addition on the deposition of diamond films were discussed by using the phase diagrams. The nitrogen addition can accelerate the deposition rate of diamond films in two aspects: enhance the CH/sub 3/ concentration at the growth surface and accelerate the abstraction of H atoms covering the growth surface sites.
Low Pressure Growth of Diamond Films under Fluorine Addition

JT Wang,YZ Wan,ZJ Liu,DW Zhang,JY Zhang

DOI: https://doi.org/10.1109/icsict.1998.786154

1998-01-01

Abstract:Phase diagrams in C-H-F system for low pressure diamond growth have been calculated in the usual conditions: 0.1-6.67 kPa. 900-1100 K. and the agreements with experiments are good. A series of ternary phase diagrams implicate that the suitable composition for low pressure diamond growth in C-HF system is confined in the small CH4-H-HF triangle. There is no diamond growth region while F/(F+H)>0.5, only a HF-CF4 line appears. The diamond growth region changes greatly with substrate temperature and fluorine concentration.
Effects of activation temperature on diamond growth in C-H, C-O and C-H-O system under low temperature

Zhijie Liu,Wei Zhang,YongZhong Wan,JiTao Wang

1998-01-01

Abstract:According to the non-equilibrium thermo-dynamic coupling model, the phase diagrams for diamond growth in C-H, C-O and C-H-O system were calculated under different activation temperatures. The effects of activation temperature and substrate temperature on diamond growth region were studied. The results can directly perform the selection of activation temperature and substrate temperature during diamond growth in the vapor phase under low pressure.
The Functions of Halogen in CVD Diamond Thin Film Deposition Process

Zhijie Liu,Wei Zhang,Yongzhong Wan,Jitao Wang

DOI: https://doi.org/10.3321/j.issn:1002-0470.1998.06.011

1998-01-01

Abstract:Non-equilibrium stationary phase diagrams for C-H-F and C-H-Cl system diamond growth are calculated based on the non-equilibrium thermodynamic coupling model. The phase diagrams coordinate well with quantities of experimental results, it can guide the experimental research on diamond growth. Also, the functions of halogen atoms in CVD diamond deposition process are discussed.
Calculation of phase diagram for diamond growth in C-H-Cl system

Zhijie Liu,Wei Zhang,YongZhong Wan,JiTao Wang

IF: 1.292

1998-01-01

Journal of Inorganic Materials

Abstract:According to the non-equilibrium thermodynamic coupling model, a phase diagram for diamond growth in C-H-CI system was calculated. A diamond growth region which is in good agreement with many reported experiments exists in the calculated phase diagram. Compared to the diamond growth region in the phase diagram of diamond growth in C-H system, the diamond growth region presented here moves toward the end of low substrate temperature. The effect of chlorine addition on diamond growth in the vapor phase was also discussed according to the reaction mechanism.
Effects of Deposition Parameters on Microstructure and Thermal Conductivity of Diamond Films Deposited by DC Arc Plasma Jet Chemical Vapor Deposition

Qu Quan-yan,Qiu Wan-qi,Zeng De-chang,Liu Zhong-wu,Dai Ming-jiang,Zhou Ke-song

DOI: https://doi.org/10.1016/s1003-6326(08)60240-x

IF: 3.752

2009-01-01

Transactions of Nonferrous Metals Society of China

Abstract:The uniform diamond films with 60 mm in diameter were deposited by improved DC arc plasma jet chemical vapor deposition technique. The structure of the film was characterized by scanning electronic microcopy(SEM) and laser Raman spectrometry. The thermal conductivity was measured by a photo thermal deflection technique. The effects of main deposition parameters on microstructure and thermal conductivity of the films were investigated. The results show that high thermal conductivity, 10.0 W/(K·cm), can be obtained at a CH4 concentration of 1.5% (volume fraction) and the substrate temperatures of 880–920 °C due to the high density and high purity of the film. A low pressure difference between nozzle and vacuum chamber is also beneficial to the high thermal conductivity.
Growth Features of Diamond Films on the Tungsten Carbide Surface with a Copper Sublayer

D. S. Vokhmyanin,S. A. Oglezneva

DOI: https://doi.org/10.3103/S1067821219060208

2020-01-24

Abstract:The surface preparation is a prerequisite for ensuring the required properties of a diamond film formed by gas-phase deposition. The influence of the temperature and concentration of the CuSO 4 etchant on the structural and phase compositions of the surface of hard-alloy materials is considered in this work, and the structural and phase compositions of a continuous polycrystalline diamond film at its growth stages is also considered. The adhesion of the diamond films to the surface of hard-alloy materials is determined qualitatively. It is established that the treatment of the hard-alloy surface in the CuSO 4 solution at t = 23°C leads to the inhomogeneous removal of a cobalt binder with chipping WC grains and the formation of the porous structure in the surface layer of the WC–6% Co alloy. The treatment by the CuSO 4 etchant at t = –2°C provides the homogeneous etching of the Co binder over the boundaries of WC grains and the formation of a chemically homogeneous surface. The orientation growth and adhesion of the diamond film depend on the elemental composition of the WC–Co alloy surface after treatment by the CuSO 4 solution. If the treatment was performed at t sln = 23°C, then the removal of copper from the defect surface WC layer is complicated during the synthesis, which provides the multidirectional growth of diamond crystals in the film along two directions, 〈111〉 and 〈110〉, which causes critical biaxial compressive stresses (2.5 GPa) and leads to low film adhesion to the hard alloy surface. If the treatment is performed at t sln = –2°C, then the orientational growth of diamond crystals in the film occurs in one preferential crystallographic direction 〈111〉, which lowers the biaxial compressive stresses (1.7 GPa) and increases the adhesive bond of the film to the hard alloy surface. The structure imperfection calculated from the ratio of the lines of integrated intensities I 1333 / I 1580 using the Raman spectroscopy method decreases with an increase in concentration at negative temperatures and increases at positive temperatures of the CuSO 4 solution during surface preparation.

metallurgy & metallurgical engineering
Quantum Chemistry Model of Surface Reactions and Kinetic Model of Diamond Growth: Effects of CH3 Radicals and C2H2 Molecules at Low-Temperatures CVD

Yuri Barsukov,Igor D. Kaganovich,Mikhail Mokrov,Alexander Khrabry

2024-05-06

Abstract:The objective of this study is to explore conditions that facilitate a significant reduction in substrate temperature during diamond growth. The typical temperature for this process is around 1200K; we aim to reduce it to a much lower level. To achieve this, we need to understand processes that limit the diamond growth at low temperatures. Therefore, we developed a detailed chemical kinetic model to analyze diamond growth on the (100) surface. This model accounts for variations in substrate temperature and gas composition. Using an ab initio quantum chemistry, we calculated the reaction rates of all major gas phase reactants with the diamond surface, totaling 91 elemental surface reactions. Consistent with previous studies, the model identifies that CH3 is a major precursor of diamond growth, and the contribution from C2H2 to the growth is significantly smaller. However, C2H2 can also contribute to forming a sp2-phase instead of a sp3-phase, and this process becomes dominant below a critical temperature. As a result, C2H2 flux inhibits diamond growth at low temperatures. To quantify this deleterious process, we developed a new mechanism for sp2-phase nucleation on the (100) surface. Similar to the so-called HACA mechanism for soot formation it involves hydrogen abstraction and C2H2 addition. Consequently, optimal low-temperature CVD growth could be realized in a reactor designed to maximize the CH3 radical production, while minimizing the generation of C2H2 and other sp and sp2 hydrocarbons.

Chemical Physics
Features of the diamond films growth on the tungsten carbide surface by a copper underlayer

D. S. Vokhmyanin,S. A. Oglezneva

DOI: https://doi.org/10.17073/1997-308x-2019-1-72-81

2019-03-21

Izvestiya Vuzov. Poroshkovaya Metallurgiya i Funktsional’nye Pokrytiya (Universitiesʹ Proceedings. Powder Metallurgy аnd Functional Coatings)

Abstract:Surface preparation is a prerequisite for ensuring the required properties of a diamond film obtained by gas-phase deposition. The paper considers the effect of temperature and concentration of the etchant CuSO4 on the structural and phase composition of the surface of hard-alloy materials. The structural and phase composition of a continuous polycrystalline diamond film at its growth stages was also studied. Adhesion of the obtained diamond films to the surface of carbide materials was qualitatively determined. It has been established that surface treatment of a hard alloy in a CuSO4 solution at a temperature t = 23 °C leads to unequal removal of the cobalt bond with chipping of WC grains and the formation of a porous structure in the surface layer of the WC–6%Co alloy. The treatment with an etchant CuSO4 at t = –2 °С ensures uniform etching of the Co-bond along the WC grain boundaries and the formation of a chemically uniform surface. The orientational growth and adhesion of the diamond film depend on the elemental composition of the surface of the WC–Co alloy after treatment with a CuSO4 solution. If the treatment was carried out at a tsolution = 23 °C, then during the synthesis of the diamond film, the removal of copper from the defective surface layer of WC is difficult. This provides the multidirectional growth of diamond crystals in the film in two directions: and , which causes critical biaxial compressive stresses (2,5 GPa) and leads to low adhesion of the film to the surface of the hard alloy. If the treatment was carried out at tsolution = –2 °C, then the orientational growth of diamond crystals in the film occurs in one preferential crystallographic direction . It reduces the biaxial compressive stresses (1,7 GPa) and increases the adhesive adhesion of the film to the surface of the hard alloy . The structure defect, calculated from the ratio of the lines of integrated intensities I1333 / I1580 using the Raman spectroscopy, decreases with concentration growth for negative temperatures and increases for positive ones of CuSO4 solution during surface preparation.
Deposition of nano-diamond-like carbon films by an atmospheric pressure plasma gun and diagnostic by optical emission spectrum on the process

Xinchao Bian,Qiang Chen,Yuefei Zhang,Lijun Sang,Wenjie Tang

DOI: https://doi.org/10.1016/j.surfcoat.2008.06.143

IF: 4.865

2008-01-01

Surface and Coatings Technology

Abstract:At an atmospheric pressure, with Ar as diluted gas and CH4 as precursor gas, nano-scale diamond-like carbon (n-DLC) film was successfully deposited on P-silicon substrate by a dielectric barrier discharge (DBD) plasma gun. The structure and composition of DLC film were analyzed by Fourier Transform Infrared (FTIR) spectroscopy and Laser Raman spectroscopy; through Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM), one observed the surface morphology of DLC film; the thickness and the mechanical property were determined by surface profilemeter and friction and wearability tester, respectively. Also, in-situ optical emission spectroscopy (OES) was applied to diagnose radical reactions in DBD gun. The role of reactive particles for DLC growth process is expected to identify.
Series of non-equilibrium stationary phase diagrams on diamond growth under different pressures of C-H system

Liu Zhijie,Zhang Wei,Wan Yongzhong,Wang Jitao

1998-01-01

Chinese journal of inorganic chemistry

Abstract:System pressures are important experimental coefficients in the deposition process of thin diamond films. If proper calculation method is chosen to predict diamond growth condition quantitatively, such mehtod can guide the experimental research on the subject. Based on non-equilibrium thermodynamic coupling model, stationary project phase diagrams on diamond growth were calculated and coordinated well with quantities of experimental results that had been published. Also, phase diagrams under different pressures for C-H system were systematically drawn in this paper and the principles of the variation of diamond growth region with different pressures were obtained. The phase diagrams all have diamond domain, which is very different from the diagrams based on classical equilibrium thermodynamics. In this way, the non-equilibrium coupling model settled the controdiction between the classical equilibrium thermodynamics and the experimental fact that the diamond can grow successively and graphite can be etched under low pressure. The calculated results can give quantitatively favorable guide to experimental research on diamond growth.
Thermodynamic Analysis for Vapor-Grown Diamond

W Zhang,YZ Wan,JT Wang

1997-01-01

Abstract:A non-equilibrium thermodynamic coupling model is applied to diamond growth in CH4/H-2 gas mixtures and oxyacetylene flames, and the phase diagrams of diamond synthesis in these two systems are calculated. These phase diagrams are different from those predicted by classical equilibrium thermodynamics, because a diamond growth region, where diamond is a stable phase, exists in each calculated phase diagram. The appearance of the diamond growth region is attributed to the super-equilibrium atomic hydrogen and/or oxygen during the growth processes. According to the calculated phase diagrams stable growth of diamond in CH4/H-2 and C2H2/O-2 mixtures can be well understood.

Thermodynamics of diamond film deposition at low pressure from chlorinated precursors

Thermodynamic Analysis for Chemical Vapor Deposition Diamond with the Participation of Chlorine

Thermodynamics Analyses of the Effect of CH 3 and C 2 H 2 on Morphology of CVD Diamond Films

Low-Temperature Growth Of Ultra-Thin Nano-Crystalline Diamond Films By Hfcvd In A Ch4/H-2 Mixture

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Phase Diagrams for Cvd Diamond Deposition from Halogen-Containing Gas Phase

Evaluation of the Growth Condition of Chemical Vapour Deposition Diamond under Fluorine Addition

Crystalline Diamond Growth in Thin Films Deposited from a CH4/Ar Rf Plasma

Deposition conditions for CVD diamond films under low pressure with nitrogen addition

Thin Film Growth Conditions for Cvd Diamond under Low Pressure

Low Pressure Growth of Diamond Films under Fluorine Addition

Effects of activation temperature on diamond growth in C-H, C-O and C-H-O system under low temperature

The Functions of Halogen in CVD Diamond Thin Film Deposition Process

Calculation of phase diagram for diamond growth in C-H-Cl system

Effects of Deposition Parameters on Microstructure and Thermal Conductivity of Diamond Films Deposited by DC Arc Plasma Jet Chemical Vapor Deposition

Growth Features of Diamond Films on the Tungsten Carbide Surface with a Copper Sublayer

Quantum Chemistry Model of Surface Reactions and Kinetic Model of Diamond Growth: Effects of CH3 Radicals and C2H2 Molecules at Low-Temperatures CVD

Features of the diamond films growth on the tungsten carbide surface by a copper underlayer

Deposition of nano-diamond-like carbon films by an atmospheric pressure plasma gun and diagnostic by optical emission spectrum on the process

Series of non-equilibrium stationary phase diagrams on diamond growth under different pressures of C-H system

Thermodynamic Analysis for Vapor-Grown Diamond