Abstract:The purpose with the present study has been to theoretically investigate the effect of P (or S) doping on the chemical vapor deposition (CVD) growth rate of diamond. Density functional theory (DFT) calculations under periodic boundary conditions were then used for the investigation of the highly symmetric H-terminated diamond (111) surface. It was shown that both the thermodynamics and kinetics of P (or S) substitutional doping during diamond (111) growth were severely affected by the dopants (as compared with the non-doped situation). As a result of the thermodynamic calculations, except for P doping in C layer 1, the thermodynamic driving force for the diamond (111) growth was found to be largely improved by positioning P within the upper surface region of the H-terminated diamond (111) surface, while the opposite was true for S-doping. The P doping had a local vertical influence on the H abstraction energies, which was not the situation for the S doping. Also, both P and S doping showed a local lateral influence on the H abstraction energies, which was more pronounced for P doping. As a result of the kinetic calculations, the vertical and lateral P doping showed no local effect on the H abstraction energy barriers. In fact, these energy barriers became zero for P positioned in C layer 2 and downwards and were also zero for longer distances from the H adsorbate. On the other hand, the vertical S doping showed a local effect on the calculated barrier energies, but no lateral effect. The calculated energy barriers were zero for all surface H adsorbates on the H-terminated diamond (111) surface when S was positioned in the 4th atomic C layer. The different results for P doping versus S doping could be explained by the fact that S contains one electron extra and that P has a larger electronegativity value. Consequently, the results showed that P positioned in the upper diamond (111) surface lattice caused an enhancement in the diamond growth rate. The exception was the position in C atomic layer 1, for which both P doping and S doping had no effect on the diamond growth rate. On the other hand, a growth rate improvement was only found for S positioned in the 4th C layer. Due to the much higher (i.e., more positive) theoretical incorporation energies of S dopants versus P dopants in the diamond lattice, it has here been concluded that P doping is more effective than S doping in increasing the growth rate of the H-terminated diamond (111). Especially when considering that the H adsorbates are very mobile on this diamond surface, which has been shown by ab initio MD simulations at experimental CVD temperatures. These observations correlate well with experimental results.

Effects of Fluorine Addition on Driving Force for CVD Diamond Growth

Evaluation of the Growth Condition of Chemical Vapour Deposition Diamond under Fluorine Addition

Low Pressure Growth of Diamond Films under Fluorine Addition

Effect of Pressure on the Growth of Boron and Nitrogen Doped HFCVD Diamond Films on WC–Co Substrate

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

A Kinetic Model for the Initial Growth of Diamond Films

Deposition conditions for CVD diamond films under low pressure with nitrogen addition

Phase diagrams for low pressure diamond synthesis in carbon-hydrogen-fluorine system

Thin Film Growth Conditions for Cvd Diamond under Low Pressure

Fluorine Effect on Adhesion and Adhesive Transfer at Iron/diamond Interfaces

Driving force for diamond deposition in the activated gas phase under low pressure

Thermodynamic Analysis for Chemical Vapor Deposition Diamond with the Participation of Chlorine

A Theoretical Study on Dopants Substituted on the H-terminated Surface Regulating the Threshold Concentration of Nitrogen for Accelerating Diamond Growth

Effects of Carbon Concentration and Gas Pressure with Hydrogen-Rich Gas Chemistry on Synthesis and Characterizations of HFCVD Diamond Films on WC-Co Substrates

Effects of temperature and pressure on CVD diamond growth from the C-H-O system

Thermodynamic coupling effect and catalyst effect for the artificial diamond growth

Thermodynamics Analyses of the Effect of CH 3 and C 2 H 2 on Morphology of CVD Diamond Films

Thermodynamic Analyses on (111) and (100) Facets Orientation Growth of CVD Diamond Film

Phase Diagrams for Cvd Diamond Deposition from Halogen-Containing Gas Phase

Effect of sulfur and phosphorous doping on the growth rate of CVD diamond (111)

HFCVD Synthesis of Boron-Doped Microcrystalline Diamonds