Driving force for diamond deposition in the activated gas phase under low pressure

David Wei Zhang,Yong-Zhong Wan,Zhi-Jie Liu,Ji-Tao Wang

DOI: https://doi.org/10.1023/A:1018572202430

1997-01-01

Journal of Materials Science Letters

Abstract:Without Abstract

What problem does this paper attempt to address?

Nano-polycrystalline diamond formation under ultra-high pressure

Chao Xu,Duanwei He,Haikuo Wang,Junwei Guan,Chunmei Liu,Fang Peng,Wendan Wang,Zili Kou,Kai He,Xiaozhi Yan,Yan Bi,Lei Liu,Fengjiao Li,Bo Hui

DOI: https://doi.org/10.1016/j.ijrmhm.2012.09.004

IF: 4.804

2013-01-01

International Journal of Refractory Metals and Hard Materials

Abstract:Well-crystallized graphite and high energy ball-milled graphite were treated under 16GPa and temperatures up to 2500°C. Our experiments indicated that the ball-milled graphite can completely transform to nano-polycrystalline diamond (NPD) at 2100°C, while the well-crystallized graphite required 2500°C. The samples were characterized by X-ray diffraction, optical microscope, scanning electron microscope, and Vickers indenter hardness test. We found that high pressure not only made the conversion of graphite to NPD thermodynamically preferred, but also reduced the needed activation energy barrier. By analyzing thermodynamics and kinetics of the transformation, we suggested a low boundary for NPD forming region based on the phase diagram of carbon, and the formation mechanisms of Nano-polycrystalline diamond.
Synthesis of Nano-Polycrystalline Diamond under High Pressure and High Temperature

XU Chao,HE Duan-wei,WANG Hai-kuo,GUAN Jun-wei,HE Kai,LI Feng-qiao,YAN Xiao-zhi,HUI Bo,PENG Fang,WANG Wen-dan

DOI: https://doi.org/10.3969/j.issn.1673-1433.2011.04.003

2011-01-01

Abstract:Bulk material of nano-polycrystalline diamond is synthesized by independently developed two-stage large cavity static high-pressure device through the direct transformation from graphite to diamond under ultra-high pressure and high temperature.The synthesis pressure is about 17GPa and temperature is about 2300℃.Micro X-ray diffraction analysis indicates that the graphite has been transformed into cubic phase diamond.The scanning electron microscopic picture and whole spectrum fitting analysis of X-ray shows that the dimension of synthesized diamond crystal is about 16nm.The Vickers hardness of the sample measured by the indentation method is above 100GPa.
Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Xingbo Liang,Lei Wang,Hongliang Zhu,Deren Yang

DOI: https://doi.org/10.1016/j.surfcoat.2007.05.032

IF: 4.865

2007-01-01

Surface and Coatings Technology

Abstract:The effect of pressure on the deposition of nanocrystalline diamond (NCD) films in a hot filament chemical vapor deposition (HFCVD) system was investigated employing a 1% CH4 in H2 gas mixture. With decreasing the growth pressure from 5.0 to 0.125 kPa, a gradual reduction of the diamond grain sizes from sub-micrometer to nanometer scale was observed, accompanied by the decline of surface roughness and the evolution of film cross-sectional morphologies changing from columnar to grainy structures. The pressure also exerted prominent influence on the film growth rate. At 2.8 kPa the growth rate featured a maximum, while decreasing to higher and lower pressures. Such pressure dependence of the diamond growth rate was suggested to result from two competing effects of pressure on the concentration of reactive species near the diamond growth surface. Further, the mechanism for the NCD film formation under low deposition pressures was discussed in light of the high secondary nucleation rate.
Effects of Fluorine Addition on Driving Force for CVD Diamond Growth

Zhijie Liu,Shi‐Jin Ding,Pengfei Wang,David Wei Zhang,Jianyun Zhang,Jitao Wang,Katharina Kohse‐Höinghaus

DOI: https://doi.org/10.1016/s0040-6090(00)00766-5

IF: 2.1

2000-01-01

Thin Solid Films

Abstract:The driving force for the diamond growth from the vapor phase with fluorine addition was studied according to a non-equilibrium thermodynamic coupling model. There exists a temperature range that the driving force for diamond growth is positive but that for activated graphite is negative. Inside the temperature range, the growth of diamond under low pressures is possible. The effects of fluorine content on driving force for the diamond growth were also discussed. The theoretical results can offer quantitative predictions for optimizing experimental conditions.
Deposition conditions for CVD diamond films under low pressure with nitrogen addition

Zhijie Liu,Wei Zhang,JianYun Zhang,YongZhong Wan,JiTao Wang

DOI: https://doi.org/10.3321/j.issn:1000-324x.1999.01.019

IF: 1.292

1999-01-01

Journal of Inorganic Materials

Abstract:Non-equilibrium stationary phase diagrams for diamond growth with nitrogen addition into the reaction system were calculated and coordinate well with published experimental results. Therefore they can direct the experimental research on the subject. The effects of nitrogen addition on the deposition of diamond films were discussed by using the phase diagrams. The nitrogen addition can accelerate the deposition rate of diamond films in two aspects: enhance the CH3 concentration at the growth surface and accelerate the abstraction of H atoms covered the growth surface sites.
Study on nucleation mechanism of diamond under high pressure and high temperature conditions

liu xiaobing,ma hongan,zhang zhuangfei,li yong,li zhanchang,hu meihua,yan bingmin,jia xiaopeng

DOI: https://doi.org/10.3969/j.issn.1006-852X.2011.03.003

2011-01-01

Abstract:Diamond crystals were synthesized with metal powder catalyst in a China-made large volume cubic press.The growth behaviors in the p/T phase diagram for the diamond synthesis were studied by adjusting technique curves.The results show that the region diagram for diamond synthesis can be divided into two parts including diamond nucleation region and growth region,depending on whether the driving force is large enough for a spontaneous nucleation of diamond or not.In the growth region the driving force is not large enough for the spontaneous nucleation,but diamond seed can exist steadily and grow up at a lower growth rate.The growth rate of diamond in the growth region is far lower than in the nucleation area.Finally,the nucleation mechanism of the diamond synthesis under high pressure and high temperature(HPHT) conditions was discussed.
Thermodynamic coupling effect and catalyst effect for the artificial diamond growth

Ji-Tao Wang,Zhong-Qiang Huang,Yong-Zhong Wan,David Wei Zhang,Hong-Yong Jia

DOI: https://doi.org/10.1557/JMR.1997.0209

IF: 2.7

2011-01-01

Journal of Materials Research

Abstract:The activated chemical vapor deposition (CVD) diamond process became one of the worldwide interesting projects in the 1980s. The basic question is why diamond can grow under activated low pressure conditions. The driving force of the transformation from graphite to diamond under low pressure is coming from a coupled reaction of the association of superequilibrium atomic hydrogen. The thermodynamic coupling effect in the activated CVD process is different from the catalyst effect in the high pressure, catalyst-assisted process for the artificial diamond growth.
Thermodynamics of diamond film deposition at low pressure from chlorinated precursors

Z.-J. Liu,D.W. Zhang,Y.-Z. Wan,J.-Y. Zhang,J.-T. Wang

DOI: https://doi.org/10.1007/s003390050904

1999-01-01

Abstract:3 and C 2 H 2 concentrations at growth surface and accelerating abstraction of surface-terminating atoms. The effects of Cl addition on diamond film quality are also discussed.
Deposition of nano-diamond-like carbon films by an atmospheric pressure plasma gun and diagnostic by optical emission spectrum on the process

Xinchao Bian,Qiang Chen,Yuefei Zhang,Lijun Sang,Wenjie Tang

DOI: https://doi.org/10.1016/j.surfcoat.2008.06.143

IF: 4.865

2008-01-01

Surface and Coatings Technology

Abstract:At an atmospheric pressure, with Ar as diluted gas and CH4 as precursor gas, nano-scale diamond-like carbon (n-DLC) film was successfully deposited on P-silicon substrate by a dielectric barrier discharge (DBD) plasma gun. The structure and composition of DLC film were analyzed by Fourier Transform Infrared (FTIR) spectroscopy and Laser Raman spectroscopy; through Scanning Electron Microscope (SEM) and Atomic Force Microscopy (AFM), one observed the surface morphology of DLC film; the thickness and the mechanical property were determined by surface profilemeter and friction and wearability tester, respectively. Also, in-situ optical emission spectroscopy (OES) was applied to diagnose radical reactions in DBD gun. The role of reactive particles for DLC growth process is expected to identify.
Shear-promoted Graphite-to-diamond Phase Transition at the Grain Boundary of Nanocrystalline Graphite

Dezhou Guo,Kun Luo,Qi An

DOI: https://doi.org/10.1080/26941112.2024.2366807

2024-01-01

Functional Diamond

Abstract:High pressure has traditionally been considered essential for the transformation of graphite into diamond. However, reducing the transition pressure required for this graphite-to-diamond (G2D) conversion holds significant appeal in both scientific research and engineering applications. In this study, we conducted large-scale molecular dynamics (MD) simulations using an environment-dependent interaction potential (EDIP) to examine the shear deformation of nanocrystalline graphite (n-graphite) with a grain size of approximately 6.5 nm. We discovered that the G2D transition pressure in n-graphite can be reduced to 2–3 GPa, significantly lower than the ∼90 GPa uniaxial stress required in crystalline graphite. This reduction is primarily due to concentrated local shear stresses at grain boundaries (GBs), which induce substantial rotations of graphite layers. These rotations facilitate the initial formation of diamond bonds at sites of pre-existing imperfections at the GBs, assisted by shear. Once initiated at the GBs, the G2D transition rapidly propagates within grains aligned parallel to the shear components, resulting in the formation of nanocrystalline diamond. Our findings underscore the critical roles of GBs and shear stress in enabling the G2D transition in n-graphite.
Study on nucleation merhsnlm of diamond under high pressure and high temperature conditions

Xiacbing Liu,Hongan Ma,Zhuangfei Thong,Yong Li,Thanchang Li,Meihua Hu,Bingmin Yan,Xiaopeng Jia

DOI: https://doi.org/10.3969/j.issn.1006-852X.2011.03.003

2011-01-01

Abstract:Diamond crystals were synthesized ith metal posder catalyst in a China-made large volume cubic press. The growth behaviors in the p/T phase diagram for the diamond synthesis were studied by adjusting technique curves. The results show that the region diagram for diagram synthesis can be divided into tao pats including diamond nucleation region and growth region, depending on whether the driving four is large enough for a spontaneous nucleation of diamond or not. In the growth region the driving force is not large enough for the spontaneous nucleation ,but diamond seed can exist steadily and grow up at a lower growth rate. The growth rate of diamond in the growth region is far lower than in the nucleation area. Finally, the nucleation mechanism of the diamond synthesis under high pressure and high temperature (HPHT) conditions was discussed. © 1994-2011 China Academic Journal Electronic Publishing House.
Effects of Carbon Concentration and Gas Pressure with Hydrogen-Rich Gas Chemistry on Synthesis and Characterizations of HFCVD Diamond Films on WC-Co Substrates

Hua Wang,Chengchuan Wang,Xinchang Wang,Fanghong Sun

DOI: https://doi.org/10.1016/j.surfcoat.2021.126839

IF: 4.865

2021-01-01

Surface and Coatings Technology

Abstract:The study concentrates on systematic investigations on the effects of extremely high or low carbon concentration (2%-14%) and gas pressure (800 Pa-3200 Pa) on crystal structures, grain sizes, phase compositions, surface and cross-sectional morphologies, growth rates, surface roughness, mechanical and tribological performances of various polycrystalline diamond films synthesized on cemented carbide (WC-Co) substrates with hydrogen-rich/ argon-lean gas mixture adopting hot filament chemical vapor deposition (HFCVD) method. The crystal structure, grain size and phase composition of various diamond films synthesized with different carbon concentration and gas pressure were analyzed, indicating that as-deposited diamond films cover microcrystalline diamond (MCD), submicrocrystalline diamond (SMCD), nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD). The surface and cross-sectional morphologies of these various polycrystalline diamond films were observed, and the growth rates of various diamond films were calculated. The three-dimensional morphologies and surface roughness were obtained. With increasing the carbon concentration and decreasing the gas pressure during the synthesis, the crystal size decreases so that diamond film with high smoothness, low surface roughness can be obtained. Subsequently, the synthesis mechanisms of MCD, SMCD, NCD and UNCD films with different carbon concentration and gas pressure under hydrogen-rich gas mixture adopting HFCVD were discussed in detail. The elastic modulus and nanohardness of different diamond films were measured quantitatively, and the film-substrate adhesion were evaluated qualitatively. Moreover, the tribological performances of various diamond films synthesized with different carbon concentration and gas pressure were studied by sliding against silicon nitride (Si3N4) ceramic balls. Results indicate that obtaining the dynamic equilibrium between sufficiently renucleation rate of diamond nuclei and effectively removal rate of non-diamond carbon phase by adjusting carbon and gas pressure under the hydrogen-rich gas chemistry can contribute to the synthesis of high-quality UNCD film.
Thin Film Growth Conditions for Cvd Diamond under Low Pressure

JT Wang,ZJ Liu,DW Zhang,JY Zhang,YZ Wan

DOI: https://doi.org/10.1109/icsict.1998.786189

1998-01-01

Abstract:Non-equilibrium stationary phase diagrams for diamond growth with nitrogen addition into the reaction system were calculated and coordinate well with published experimental results. Therefore they can direct the experimental research on the subject. The effects of nitrogen addition on the deposition of diamond films were discussed by using the phase diagrams. The nitrogen addition can accelerate the deposition rate of diamond films in two aspects: enhance the CH/sub 3/ concentration at the growth surface and accelerate the abstraction of H atoms covering the growth surface sites.
Investigation of Diamond Nucleation under Very Low Pressure in Chemical Vapor Deposition

Qijin Chen

DOI: https://doi.org/10.48550/arXiv.cond-mat/9708146

1997-08-20

Materials Science

Abstract:Diamond nucleation under very low pressure (0.1-1.0 torr) was obtained at very high nucleation densities and very rapid rates using hot-filament chemical vapor deposition (HFCVD). The density on mirror-polished silicon was as high as 10^10 - 10^11 cm^{-2}, equivalent to the highest density in a microwave-plasma CVD system. That on scratched silicon substrates was up to 10^9 cm^{-2}, 1-2 orders of magnitude higher than that obtained under conventionally low pressure (tens of torr, 10^7 - 10^8 cm^{-2}). Also, the density on scratched titanium substrates was as high as 10^10 cm^{-2}. The samples were characterized using scanning electron microscopy (SEM) and Raman spectroscopy. The mechanism is investigated in detail, revealing that, under very low pressure, very long mean free path of the gas species, strong electron emission from the hot filament, and high efficiency of decomposition of hydrocarbon species by the filament greatly increase the concentration of reactive hydrocarbon radicals and atomic hydrogen on the substrate surface, and therefore, dramatically enhance the nucleation eventually. This work has great practical applications and theoretical significance.
Calculated phase diagrams for activated low pressure diamond growth from C–H, C–O, and C–H–O systems

Ji-Tao Wang,Yong-Zhong Wan,David Wei Zhang,Zhi-Jie Liu,Zhong-Qiang Huang

DOI: https://doi.org/10.1557/JMR.1997.0426

IF: 2.7

2011-01-01

Journal of Materials Research

Abstract:Three-dimensional temperature ( T )–pressure ( P )–composition ( X ) phase diagrams of binary carbon-hydrogen (C–H) and carbon-oxygen (C–O) systems for activated low pressure diamond growth have been calculated. Based on an approximation of linear combination between C–H and C–O systems, a projective ternary carbonhydrogen-oxygen (C–H–O) phase diagram has also been obtained. There is always a diamond growth region in each of these phase diagrams. Once a supply of external activating energy stops, the diamond growth region will not exist. Nearly all of the reliable experimental data reported in the literature drop into the possible diamond growth region of the calculated projective ternary C–H–O phase diagram under the conditions of 0.01–100 kPa and above 700 K.
Phase diagrams for activated CVD diamond growth

Ji-Tao Wang,Yong-Zhong Wan,Zhi-Jie Liu,Hao Wang,David Wei Zhang,Zhong-Qiang Huang

DOI: https://doi.org/10.1016/S0167-577X(97)00123-7

IF: 3

1998-01-01

Materials Letters

Abstract:Non-equilibrium thermodynamics is successfully used for low pressure activated diamond syntheses. Binary carbon-hydrogen, carbon-oxygen, and ternary carbon-hydrogen-oxygen phase diagrams for activated low pressure diamond growth have been calculated on the base of a non-equilibrium thermodynamic coupling model. Theoretical results agree excellently with a lot of experimental data, especially, with Marinelli's critical experimental data.
Effect of Pressure on the Growth of Boron and Nitrogen Doped HFCVD Diamond Films on WC–Co Substrate

Liang Wang,Bin Shen,Fanghong Sun,Zhiming Zhang

DOI: https://doi.org/10.1002/sia.5748

2015-01-01

Surface and Interface Analysis

Abstract:Boron and nitrogen compounds are added in the acetone/hydrogen gas mixture to deposit hot filament chemical vapor deposition (HFCVD) diamond films on the cobalt cemented tungsten carbide (WC–Co) substrate under the pressure of 1–4 kPa. The as‐deposited diamond films are characterized by field emission scanning electron microscope (FESEM), atomic force microscopy (AFM), X‐ray diffraction (XRD) spectroscopy and Raman spectroscopy. The results reveal that the surface morphology, growth rate, structure and quality of the diamond films vary with the pressure and the type of the impurity addition. The diamond grains tend to develop into the nanometer scale with the decrease of the pressure. However, adding of boron or nitrogen impurities in the gas mixture will weaken the nanocrystallization effect by reducing the carbon supersaturation. Density functional theory (DFT) calculations indicate that co‐adsorption of B and N containing radicals can favor the adsorption of CH3 on diamond (100) surface. Thus, at low pressure of 1 kPa, large grained cubic (100) facet diamond rather than typical nanometer diamond is produced for B–N co‐addition gas mixture. The present results appear to be useful to efficiently synthesize high quality doped diamonds with desirable properties for mechanical application. Copyright © 2015 John Wiley & Sons, Ltd.
Environmental Conditions to Achieve Low Adhesion and Low Friction on Diamond Surfaces

Haibo Guo,Yue Qi

DOI: https://doi.org/10.1088/0965-0393/18/3/034008

IF: 2.421

2010-01-01

Modelling and Simulation in Materials Science and Engineering

Abstract:The adhesion and friction of both diamond and diamond-like carbon coatings can be dramatically changed by active gases in the environment, such as hydrogen, water vapor and humid air, due to tribochemical reactions. To understand the atmospheric effects and to predict the optimized environmental conditions (gas species, pressure and temperature), the tribochemical reactions on diamond surfaces are modeled from first principles thermodynamics. The results show that both H-2 and a mixture of H2O plus O-2 (such as humid air) can effectively achieve low adhesion and low friction with a fully -H or -OH passivated surface at very low partial pressures. Water vapor itself can passivate diamond (1 1 1) and (1 0 0) surfaces into half -H and half -OH terminated surfaces, but only at unrealistically high partial pressures. Even a trace amount of oxygen combined with water vapor can significantly reduce the water partial pressure for passivation. In all tribochemical reactions considered, the partial pressure required to reach low adhesion and low friction increases rapidly with temperature, and diamond (1 0 0) surface requires less partial pressures than (1 1 1) surface for surface passivation.
Achieving High Nucleation Density of Diamond Film under Low Pressures in Hot-Filament Chemical Vapor Deposition

Chen Yan,Mei Jun,Chen Qijin,Lin Zhangda

DOI: https://doi.org/10.1557/proc-363-175

1994-01-01

Abstract:Diamond have been deposited rapidly under low pressures (<0.1 Torr) via hot filament chemical vapor deposition (HFCVD) on either scratched or mirror-smooth single crystalline silicon and titanium with nucleation densities of 109-1011 /cm2. The nucleation density increases with the pressure decreases. Hydrogen and methane were used as the gaseous source. Raman spectroscopy and scanning electron microscopy(SEM ) were used to analyze the obtained films. This result breaks through the limit that diamond film can only be synthesized above 10 Torr, showing a promising prospect that, as is essential for heteroepitaxia1 growth of monocrystal1ine diamond films, diamond film can be easily nucleated on unscratched substrate via Hot Filament CVD.
A Theoretical Study on Dopants Substituted on the H-terminated Surface Regulating the Threshold Concentration of Nitrogen for Accelerating Diamond Growth

Weikang Zhao,Yan Teng,Kun Tang,Shunming Zhu,Kai Yang,Kangkang Fan,Gengyou Zhao,Liangxue Gu,Bo Feng,Rong Zhang,Youdou Zheng,Shulin Gu

DOI: https://doi.org/10.1016/j.diamond.2024.111317

IF: 3.806

2024-01-01

Diamond and Related Materials

Abstract:Nitrogen is widely believed to accelerate the diamond growth by chemical vapor deposition (CVD). While there is currently no consensus on the reaction mechanism of nitrogen increasing the growth rate of CVD diamond. In this work, we have proposed a chemical adsorption model formed by substitutional nitrogen on the H-terminated surface of diamond. The first principles calculations based on density functional theory are used to systematically study the effects of substitutional nitrogen on several key features (i.e., surface absorption energy, geometric structure, atomic charge, electron bond population, and electron density) of the H-terminated surfaces. The results indicate that nitrogen substituted on the H-terminated surface are probably more favorable for hydrogen desorption, which can not only affect the properties of directly bonding adjacent species, but also cause changes in the geometric and electronic properties around the surface by electron transfer or forming additional covalent bonds. Furthermore, compared with single nitrogen doping, the co-doped structures formed by adding boron or phosphorus at a relatively low N/H ratio on the H-terminated surface could enhance or weaken the stability of the diamond surface, that is, weaken or enhance the desorption process of hydrogen. It is therefore proved the existence of a regulatory effect on the threshold concentration required for nitrogen to accelerate diamond growth.

Driving force for diamond deposition in the activated gas phase under low pressure

Nano-polycrystalline diamond formation under ultra-high pressure

Synthesis of Nano-Polycrystalline Diamond under High Pressure and High Temperature

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH4/H2 gas mixture

Effects of Fluorine Addition on Driving Force for CVD Diamond Growth

Deposition conditions for CVD diamond films under low pressure with nitrogen addition

Study on nucleation mechanism of diamond under high pressure and high temperature conditions

Thermodynamic coupling effect and catalyst effect for the artificial diamond growth

Thermodynamics of diamond film deposition at low pressure from chlorinated precursors

Deposition of nano-diamond-like carbon films by an atmospheric pressure plasma gun and diagnostic by optical emission spectrum on the process

Shear-promoted Graphite-to-diamond Phase Transition at the Grain Boundary of Nanocrystalline Graphite

Study on nucleation merhsnlm of diamond under high pressure and high temperature conditions

Effects of Carbon Concentration and Gas Pressure with Hydrogen-Rich Gas Chemistry on Synthesis and Characterizations of HFCVD Diamond Films on WC-Co Substrates

Thin Film Growth Conditions for Cvd Diamond under Low Pressure

Investigation of Diamond Nucleation under Very Low Pressure in Chemical Vapor Deposition

Calculated phase diagrams for activated low pressure diamond growth from C–H, C–O, and C–H–O systems

Phase diagrams for activated CVD diamond growth

Effect of Pressure on the Growth of Boron and Nitrogen Doped HFCVD Diamond Films on WC–Co Substrate

Environmental Conditions to Achieve Low Adhesion and Low Friction on Diamond Surfaces

Achieving High Nucleation Density of Diamond Film under Low Pressures in Hot-Filament Chemical Vapor Deposition

A Theoretical Study on Dopants Substituted on the H-terminated Surface Regulating the Threshold Concentration of Nitrogen for Accelerating Diamond Growth