Abstract:Yttria-stabilized zirconia (YSZ) thin films on polycrystalline substrates were grown by cold-wall aerosol-assisted metallorganic chemical vapor deposition (MOCVD) at the temperatures of 673-1233 K using metal beta-diketonate chelates as precursors. Thin uniform films with amorphous structure were obtained below 673 K; when the deposition temperature increases to 773-1023 K, YSZ films appear to be a mixture of cubic and monoclinic phases; single cubic YSZ phase can be obtained at deposition temperature above 1023 K. The Y/Zr atom ratio estimated from the corresponding X-ray photoelectron spectroscopy peaks is less than the feed ratio, which can be interpreted by different transfer resistance of Y and Zr intermediates diffusing to the substrate surface. The films obtained at 673-1023 K possess a layer structure originated from low mobility of the absorbed species. Along with the increase of the deposition temperature, the grains become mature and larger, and then unite with each other to form a continuous columnar film. Mass transport dominates the growth process within lower temperatures, and homogeneous reaction will interrupt the growth at increasingly high temperatures. Growth rate expression with respect to temperature, pressure, gas flow rate, and metal concentration of precursor solutions was deduced assuming deposition of mass-transport limited mechanism, which is consistent with the experimental results. (c) 2005 The Electrochemical Society. All rights reserved.

Preparation Of Y2o3-Stabilized Zro2 Thin Electrolyte Films From Langmuir-Blodgett Film Precursors By Means Of Surface Ions

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Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

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Deposition and Characterization of YSZ Thin Films by Aerosol-Assisted CVD

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From zirconia to yttria: Sampling the YSZ phase diagram using sputter-deposited thin films

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Preparation of Yttria Stabilized Zirconia Ultrafiltration Membranes with Inorganic Precursors

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Preparation of YSZ Electrolyte Film by Electrophoretic Deposition under Constant Voltage

Preparation of epitaxial yttria-stabilized zirconia with non-quilibrium t' phase and ferroelastic domain by pulsed laser deposition