Abstract:This work aims to study a possible modification in the electronic structure of scandia-ceria-stabilized zirconia (10Sc1CeSZ) ceramics sintered at different temperatures. In addition to using X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy to investigate the structural and electrical properties, we employed X-ray photoelectron spectroscopy (XPS) to determine the chemical state information of the atoms involved, along with compositional analysis. As expected, a significant increase in grain ionic conductivity with the sintering temperature was present. This increase was accompanied by a decrease in the porosity of the samples, an increase in the grain size, and a transformation from the rhombohedral to the cubic phase. The phase transformation was detected not only using XRD, but also using XPS and, for this type of ceramic, XPS detected this transformation for the first time. In addition to the changes in the structural characteristics, the increase in the ionic conductivity was accompanied by a modification in the electronic structure of the ceramic surface. The XPS results showed that the surface of the ceramic sintered at the lower temperature of 1100 °C had a higher amount of Zr-OH bonds than the surface of the ceramic sintered at the higher temperature of 1400 °C. The existence of these Zr-OH bonds was confirmed using Fourier-transform infrared spectroscopy (FTIR). From this result, taken together with the difference between the oxygen/zirconium ratios in these ceramics, also identified using XPS, we conclude that there were fewer oxygen vacancies in the ceramic sintered at the lower temperature. It is argued that these two factors, together with the changes in the structural characteristics, have a direct influence on the conductive properties of the studied ceramics sintered at different temperatures.

Preparation and Characterization of Sc2O3-stabilized ZrO2 Thin-film Electrolyte

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD

Deposition and Characterization of AZO Thin Films on Flexible Glass Substrates Using DC Magnetron Sputtering Technique

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Preparation and Characterization of Sc2o3-Doped Zro2 Nanofiber

Phase Stability And High Conductivity Of Scsz Nanofibers: Effect Of The Crystallite Size

Enhanced conductivity of (110)-textured ScSZ films tuned by an amorphous alumina interlayer

Preparation and Characterization of Nanocrystalline Thin Films of Al2O3 or TiO2 Doped Scandia Stabilized Zirconia Solid Electrolytes

Homogeneous Precipitation Synthesis and Electrical Properties of Scandia Stabilized Zirconia

Nanocrystalline Cubic Phase Scandium-Stabilized Zirconia Thin Films

Preparation and Characterization of Nanocrystalline Thin Films of Al_2O_3 or TiO_2 Doped Scandia Stabilized Zirconia Solid Electrolytes

Structural and Electric Properties of SrZrO3 Thin Films with Different Annealing Conditions

Preparation of dense ScSZ thin films by plasma spraying with densified ScSZ powders

Deposition and Characterization of YSZ Thin Films by Aerosol-Assisted CVD

Thermal Stability and Interfacial Properties of Zralxsiyoz Films Prepared by Pulse-Laser Deposition

Fabrication and characterization of SrZrO3 thin films prepared by sol–gel

X-ray Photoelectron Spectroscopy Analysis of Scandia-Ceria-Stabilized Zirconia Composites with Different Transport Properties

Dielectric Properties of SrZrO3 Thin Films Prepared by Pulsed Laser Deposition