Abstract:Yttria-stabilized zirconia (YSZ) thin films on polycrystalline substrates were grown by cold-wall aerosol-assisted metallorganic chemical vapor deposition (MOCVD) at the temperatures of 673-1233 K using metal beta-diketonate chelates as precursors. Thin uniform films with amorphous structure were obtained below 673 K; when the deposition temperature increases to 773-1023 K, YSZ films appear to be a mixture of cubic and monoclinic phases; single cubic YSZ phase can be obtained at deposition temperature above 1023 K. The Y/Zr atom ratio estimated from the corresponding X-ray photoelectron spectroscopy peaks is less than the feed ratio, which can be interpreted by different transfer resistance of Y and Zr intermediates diffusing to the substrate surface. The films obtained at 673-1023 K possess a layer structure originated from low mobility of the absorbed species. Along with the increase of the deposition temperature, the grains become mature and larger, and then unite with each other to form a continuous columnar film. Mass transport dominates the growth process within lower temperatures, and homogeneous reaction will interrupt the growth at increasingly high temperatures. Growth rate expression with respect to temperature, pressure, gas flow rate, and metal concentration of precursor solutions was deduced assuming deposition of mass-transport limited mechanism, which is consistent with the experimental results. (c) 2005 The Electrochemical Society. All rights reserved.

Preparation of Yttria-Stabilized Zirconia(ysz)films by an Electrophoretic Deposition Method

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

Formation and Rate Processes of Y[sub 2]o[sub 3] Stabilized ZrO[sub 2] Thin Films from Zr(DPM)[sub 4] and Y(DPM)[sub 3] by Cold-Wall Aerosol-Assisted MOCVD

Synthesis of YSZ film by solid single source PE-MOCVD method and characterization

Preparation of Yttria stabilized Zirconia (YSZ) film by electrophoretic deposition (EPD) method

Preparation of YSZ Electrolyte Film by Electrophoretic Deposition under Constant Voltage

Deposition and Characterization of YSZ Thin Films by Aerosol-Assisted CVD

Fabrication of YSZ Thin Films from Suspension by Electrostatic Spray Deposition

Preparation Of Y2o3-Stabilized Zro2 Thin Electrolyte Films From Langmuir-Blodgett Film Precursors By Means Of Surface Ions

Fabrication and Performance of Anode-Supported YSZ Films by Slurry Spin Coating

Preparation and Performance of YSZ Thin-Film by Centrifugal Deposition Technique

Simple Preparation of Yttria‐Stabilized Zirconia Powders by Plasma Discharge Electrolysis in Nitrate Solution

Dense YSZ electrolyte films prepared by modified electrostatic powder coating

YSZ thin film prepared by gravity deposition method combined with co-sintering method

Zro2 and Ysz Thin-Films Synthesized by Microwave Plasma Cvd Process

Research on YSZ thin films prepared by plasma-CVD process

Study of YSZ Electrolyte Film Fabricated by Suspension

Anode-supported YSZ Film Fabricated by Using Micron-Sized Particles

The Electrochemical Properties of Yttria-Stabled Zirconia Electrolyte Films by Slurry Dip-Coating Method