Miniature Microphone With Silicon-Based Ferroelectric Thin Films

Yi Yang,Tian-Ling Ren,Lin-Tao Zhang,Ning-Xin Zhang,Xiao-Ming Wu,Jian-She Liu,Li-Tian Liu,Zhi-Jian Li
DOI: https://doi.org/10.1080/10584580390254989
2003-01-01
Integrated Ferroelectrics
Abstract:A miniature microphone with silicon-based lead zirconate titanate (PZT) thin films has been fabricated and tested. The main structure of the device is composed of Al/Pt/PZT/Pt/Ti/SiO2 /Si3N4 /SiO2 /Si multi-layer diaphragm. The PZT thin films have been prepared using an improved sol-gel method. Optimized fabrication process of the device has been developed, especially, RIE (reactive ion etching) and IBE (ion beam etching) processes have been used to etch the PZT thin film and electrode metal successfully. The sensitivity of microphone is 16 mV/Pa at 1 KHz and 158 mV/Pa at the resonant frequency of 17.3 KHz. The electrical and thermal reliability of the microphone is satisfactory. This miniature microphone can be widely used in hearing aids, mobile phones, and many other applications.
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