High Sensitivity and High S/N Microphone Achieved by PZT Film with Central-Circle Electrode Design

J. -L. Huang,S. -C. Lo,J. -J. Wang,C. -E. Lu,S. -H. Tseng,M. -C. Wu,W. Fang
DOI: https://doi.org/10.1109/memsys.2017.7863628
2017-01-01
Abstract:This study based on piezo-electric sensing principle to develop a high S/N ratio MEMS microphone. The patterned PZT and electrodes designed implemented above the clamped diaphragm to generate high stress concentration on PZT and Si bimorph diaphragm. The proposed central-circle electrode design can induce more charge than the edge-surrounded electrode design (served as the reference design). The proposed design also provides a smooth stress distribution across electrode to tolerate more process variation such as offset from double-side alignment and boundary change by DRIE undercut. The measured results demonstrate the S/N is about 64dB (reference design: 53dB) for the piezo-electric microphone.
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