Abstract:This paper presents the results of a study of the state of ytterbium atoms in silicon, carried out using the methods of Fourier transform infrared spectroscopy (IR) and Raman spectroscopy (RS). Silicon samples doped with ytterbium impurities were analyzed using FSM-2201 and SENTERRA II Bruker spectrometers. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. The results of the study confirm that doping silicon with ytterbium impurities leads to a decrease in the concentration of optically active oxygen by 30-40%, depending on the concentration of the introduced impurities. It was also found that an increase in the number of defects leads to a broadening of the amorphous zone. It is assumed that similar dependencies exist for the Si-Yb system; however, to the best of our knowledge, similar results have not been reported previously. It is noted that the relative intensity of the three Raman bands in Si-Yb systems in the LTIOS (The light and temperature induced ordered state) state changes, and the relative intensity of Si-Si decreases. This indicates that pendant bonds are mainly formed by the breaking of Si-Si bonds. It was also observed that the light intensity causing this condition is far from that required for laser or solid phase crystallization. Using the Raman spectroscopy method, a structural transformation was discovered, expressed in a densely packed array of nanocrystals with a size of less than 11 lattice parameters. Small clusters were under strong internal stress (up to 3 GPa), which probably prevents the cluster size from increasing beyond the critical value for irreversible crystallization.

Ion beam synthesis and characterization of yttrium silicide

Formation of Ysi2-X Layers on Si by High-Current Y Ion Implantation

Yttrium Silicide Formation and Its Contact Properties on Si(100)

Epitaxial ternary Er0.5Y0.5Si1.7 silicide layers formed by channeled ion beam synthesis

Growth Of Pinhole-Free Ytterbium Silicide Film By Solid-State Reaction On Si(001) With A Thin Amorphous Si Interlayer

Electronic Structure of Yb/H–Si (111) Interface

Rare Earth Metal Silicides Synthesized by High Current Metal Ion Implantation

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Structural Properties of Silicon Doped Rare Earth Elements Ytterbium

Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Ion-irradiation effect on swelling and microstructure of BN particle dispersed liquid phase sintering SiC

Formation of Zr-disilicide by high-current Zr ion implantation into Si using metal vapor vacuum arc ion source

Synthesis of Molybdenum Silicide by Both Ion Implantation and Ion Beam Assisted Deposition

Microstructural modifications induced in Si+-implanted yttria-stabilised zirconia: a combined RBS-C, XRD and Raman investigation

Direct Synthesis of Continuous Sm Disilicide Films by Sm-ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

Microstructures and Phases of Ytterbium Silicate Coatings Prepared by Plasma Spray-Physical Vapor Deposition

Ion Beam Synthesis of embedded SiC

Growth of DySi2Layers on Si Surface by High-Current Dy-Ion Implantation

Fabrication of ion-sliced yttrium-aluminum-garnet thin films on silica by He+ implantation and Cu–Sn bonding

Silicidation of Ni(Yb) Film on Si(001)

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams