Abstract:Amorphous silicon (a-Si) and microcrystalline silicon (µc-Si) films were deposited in atmospheric-pressure (AP) He/H2/SiH4 plasma excited by a 150 MHz very high-frequency (VHF) power at a temperature of 220 °C. The variations of thickness and film crystallinity in the gas flow direction were studied using two electrodes (length = 16 and 5 mm). The electrical properties of the deposited Si layers were evaluated by fabricating bottom-gate thin film transistors (TFTs). The results showed that the chemical reactions both in gas phase and on the growing film surface were significantly enhanced in AP-VHF plasma, promoting phase transition from amorphous to microcrystalline on a time scale of the order of less than 0.1 ms. The performance of bottom-gate TFTs showed that a-Si layers formed in the upstream portion of the plasma zone had good enough electrical property (field-effect mobility of 1–1.5 cm2 V−1 s−1) despite very high deposition rates (several tens of nm s−1). Meanwhile, µc-Si layers deposited in the downstream portion of the plasma zone did not acquire their original superiority over a-Si films with reference to electrical properties, although the use of the shorter electrode greatly improved the layer quality. The precise control of gas residence time is primarily important for the deposition of µc-Si films with desired qualities through sufficiently passivating grain boundaries with a-Si tissues.

High Rate Deposition of Microcrystalline Silicon Films Using Jet-Type Inductively Coupled Plasma Chemical Vapor Deposition

Growth and Microstructure Properties of Microcrystalline Silicon Films Deposited Using Jet-Icpcvd

Preparation Of Low-K Nanoporous Sio2 Films By Plasma-Enhanced Chemical Vapor Deposition

Crystallization Control of the Incubation Layer in Microcrystalline Silicon Films Deposited by Using Jet-Icpcvd

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

High Rate Deposition Of Nanocrystalline Silicon By Thermal Plasma Enhanced Cvd

A New Method Used to Control the Structure of High Rate Microcrystalline Silicon Thin Films

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Microcrystalline Silicon Materials and Solar Cells with High Deposition Rate

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Analysis of Heating Effect on the Process of High Deposition Rate Microcrystalline Silicon

Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

Study on the Growth Mechanism and Microstructure of High Rate Growth Μc-Si:H Thin Films

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Influence of Total Gas Flow Rate on Microcrystalline Silicon Films Prepared by VHF-PECVD

Fabrication of 1nm/s High Deposition Microcrystalline Silicon and Its Application in Solar Cells

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Highly Doped P-Type Microcrystalline Silicon Thin Films Fabricated by A Low-Frequency Inductively Coupled Plasma at A Low Temperature

Influence of the Total Gas Flow Rate on High Rate Growth Microcrystalline Silicon Films and Solar Cells

Effects of Total Gas Flow Rates on the High Rate Growth Microcrystalline Silicon Thin Films