Abstract:Amorphous silicon (a-Si) and microcrystalline silicon (µc-Si) films were deposited in atmospheric-pressure (AP) He/H2/SiH4 plasma excited by a 150 MHz very high-frequency (VHF) power at a temperature of 220 °C. The variations of thickness and film crystallinity in the gas flow direction were studied using two electrodes (length = 16 and 5 mm). The electrical properties of the deposited Si layers were evaluated by fabricating bottom-gate thin film transistors (TFTs). The results showed that the chemical reactions both in gas phase and on the growing film surface were significantly enhanced in AP-VHF plasma, promoting phase transition from amorphous to microcrystalline on a time scale of the order of less than 0.1 ms. The performance of bottom-gate TFTs showed that a-Si layers formed in the upstream portion of the plasma zone had good enough electrical property (field-effect mobility of 1–1.5 cm2 V−1 s−1) despite very high deposition rates (several tens of nm s−1). Meanwhile, µc-Si layers deposited in the downstream portion of the plasma zone did not acquire their original superiority over a-Si films with reference to electrical properties, although the use of the shorter electrode greatly improved the layer quality. The precise control of gas residence time is primarily important for the deposition of µc-Si films with desired qualities through sufficiently passivating grain boundaries with a-Si tissues.

Crystallization Control of the Incubation Layer in Microcrystalline Silicon Films Deposited by Using Jet-Icpcvd

Growth and Microstructure Properties of Microcrystalline Silicon Films Deposited Using Jet-Icpcvd

High Rate Deposition of Microcrystalline Silicon Films Using Jet-Type Inductively Coupled Plasma Chemical Vapor Deposition

Formation Mechanism of Incubation Layers in the Initial Stage of Microcrystalline Silicon Growth by PECVD

Further Study of the Incubation Layer in Hydrogenated Microcrystalline Silicon Film Growth

A New Method Used to Control the Structure of High Rate Microcrystalline Silicon Thin Films

Influence of Ultrathin Amorphous Silicon Layers on the Nucleation of Microcrystalline Silicon Films under Hydrogen Plasma Treatment

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

High-Rate Deposition of Microcrystalline Silicon Thin Film by Multi-Step Method

Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of Μm-Thick A-Si:H Films

Study of Incubation Layers in Microcrystalline Silicon Solar Cells

Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization

The Optoelectronic Properties of Silicon Films Deposited by Inductively Coupled Plasma CVD

Rapid And Controllable A-Si:H-To-Nc-Si:H Transition Induced By A High-Density Plasma Route

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

Aluminum-Induced Crystallization Of Pecvd Amorphous Silicon At 120 Degrees C

Substrate-thickness dependence of hydrogenated microcrystalline silicon nucleation rate on amorphous silicon layer

Crystallization of amorphous silicon on glass substrate by microwave annealing for thin-film-transistor applications