Growth of Nitrogen-Doped P-Type ZnO Films by Spray Pyrolysis and Their Electrical and Optical Properties

JL Zhao,XM Li,JM Bian,WD Yu,CY Zhang
DOI: https://doi.org/10.1016/j.jcrysgro.2005.03.079
IF: 1.8
2005-01-01
Journal of Crystal Growth
Abstract:Nitrogen-doped ZnO films were deposited on silicon (100) substrate using zinc acetate and ammonium acetate aqueous solution as precursors by ultrasonic spray pyrolysis. Successful p-type doping can be realized at optimized substrate temperature. The p-type ZnO films show excellent electrical properties such as hole concentration of ∼1018cm−3, hole mobility of ∼102cm2V−1s−1 and resistivity of ∼10−2Ωcm. In the photoluminescence measurement, a strong near-band-edge emission was observed, while the deep-level emission was almost undetectable in both undoped and N-doped ZnO films. The growth and doping mechanism of N-doped ZnO films were discussed.
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