Abstract:P-type ZnO films with c-axis orientation deposited by DC reactive magnetron sputtering are first reported in this paper. ZnO films were prepared in NH3–O2 atmosphere (ammonia concentration varied from 0% to 67%) with the substrate temperature in the range of 400–550°C. The properties were examined by X-ray diffraction, atomic force microscopy, Hall measurement, spreading resistance processing and optical transmission spectra. Results showed that excess zinc and interstitial hydrogen play important roles in the doping process. The N-doped ZnO film deposited on α-Al2O3 (0001) at a substrate temperature of 500°C and an ammonia concentration of 50% showed p-type conduction with good electrical properties. A carrier density of 3.2×1017cm−3 and resistivity of 35Ωcm were observed. The p-type ZnO films possess a transmittance of about 90% in the visible region and a band gap of 3.21eV at room temperature. In addition, ZnO p–n homojunctions on p-Si(100) substrate (p-ZnO:N/n-ZnO/p-Si) have also been first achieved, which could further open the door for practical applications in diverse optical devices.

High Quality P-Type Zno Film Growth by A Simple Method and Its Properties

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

High Quality P-Type Zno Films Grown by Low Pressure Plasma-Assisted Mocvd with N2o Rf Plasma Doping Source

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Electrical And Structural Properties Of P-Type Zno : N Thin Films Prepared By Plasma Enhanced Chemical Vapour Deposition

p-Type conduction in Al–N co-doped ZnO films

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

P-type ZnO:N Films Prepared by Thermal Oxidation of Zn 3 N 2

P-Type Conversion of Zno Thin Films by Plasma Immersion Ion Implantation

P-Type ZnO Thin Films Fabricated by Dc Magnetron Reactive Sputtering Method at Different Substrate Temperatures

Low‐Temperature Growth of P‐type ZnO Thin Films Via Plasma‐Assisted MOCVD

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth

Low-Pressure Mocvd Growth of P-Type Zno Thin Films by Using No As the Dopant Source

Preparation of P-Type ZnO Films by Al+N-codoping Method