Abstract:Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Influence of Boron Doping on Microcrystalline Silicon Growth

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

The Change Of Electronic Transport Behaviors By P And B Doping In Nano-Crystalline Silicon Films With Very High Conductivities

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Photovoltaic Feature of Boron-Doped Nano-Crystalline Carbon Films on Silicon

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

High conductivity characteristics of phosphorus-doped nanocrystalline silicon thin films by KrF pulsed excimer laser irradiation method

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Doping of Nanocrystalline Four Hexagnol Silicon Carbide Films

Influence of Doping and Microstructure on Electrical Properties of Doped Silicon Thin Films

Effect of Substrate Temperature on the Growth and Properties of Boron-Doped Micro Crystalline Silicon Films

A Wide Band Gap Boron-doped Microcrystalline Silicon Film Obtained with VHF Glow Discharge Method