Abstract:Technologically important low-resistivity bulk Si has been usually produced by the traditional Czochralski growth method. We now explore a novel method to obtain low-resistivity bulk Si by hot-pressing B-and P-hyperdoped Si nanocrystals (NCs). In this work bulk Si with the resistivity as low as similar to 0.8 (40) m Omega.cm has been produced by hot pressing P (B)-hyperdoped Si NCs. The dopant type is found to make a difference for the sintering of Si NCs during the hot pressing. Bulk Si hot-pressed from P-hyperdoped Si NCs is more compact than that hot-pressed from B-hyperdoped Si NCs when the hot-pressing temperature is the same. This leads to the fact that P is more effectively activated to produce free carriers than B in the hot-pressed bulk Si. Compared with the dopant concentration, the hot-pressing temperature more significantly affects the structural and electrical properties of hot-pressed bulk Si. With the increase of the hot-pressing temperature the density of hot-pressed bulk Si increases. The highest carrier concentration (lowest resistivity) of bulk Si hot-pressed from B-or P-hyperdoped Si NCs is obtained at the highest hot-pressing temperature of 1050 degrees C. The mobility of carriers in the hot-pressed bulk Si is low (<= similar to 30 cm(-2)V(-1)s(-1)) mainly due to the scattering of carriers induced by structural defects such as pores. (C) 2014 Author(s).

Low-resistivity bulk silicon prepared by hot-pressing boron- and phosphorus-hyperdoped silicon nanocrystals

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Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

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Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

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Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Lightly boron and phosphorus co-doped silicon nanocrystals

Variations of High-Pressure Thermoelectric and Mechanical Properties of Si Single Crystals under Doping with N and P–T Pre-Treatment

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Fabrication of silicon nitride with high thermal conductivity and flexural strength by hot‐pressing flowing sintering

Crystal growth and resistivity modulation of n-type phosphorus-doped cast mono-like silicon