Abstract:This study explores ultraviolet laser activation of phosphorus dopants in polysilicon passivated contacts for crystalline silicon solar cells. The optimum laser fluence conditions produce an implied open circuit voltage of 712 mV and a contact resistivity of 89 mΩ‐cm2. Hyperdoping is found to occur at the surface of the polysilicon layer with an active phosphorus concentration of ≈1021 cm−3. In crystalline silicon photovoltaics (c‐Si PV), a pulsed laser can be used as a substitute for a high‐temperature furnace dopant diffusion/activation step. In contrast to furnace‐based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low‐pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly‐Si) passivated contact layer. The highest implied open‐circuit voltage iVoc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρc, which is attributed to a lower dopant concentration across the poly‐Si(n+)/SiOx/c‐Si interface. Regardless, the optimum iVoc, ρc combination is measured at a laser fluence of 0.78 J cm−2 producing values of 712 mV and 89 mΩ‐cm2, respectively. These values are still compatible with high‐efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.

High conductivity characteristics of phosphorus-doped nanocrystalline silicon thin films by KrF pulsed excimer laser irradiation method

Improvement of the electrical properties of nanocrystalline silicon films by the KrF pulsed excimer laser irradiation method

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity

Recrystallization and activation of ultra-high-dose phosphorus-implanted silicon using multi-pulse nanosecond laser annealing

Charge Transfer of Single Laser Crystallized Intrinsic and Phosphorus-Doped Si-nanocrystals Visualized by Kelvin Probe Force Microscopy

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Formation and Electrical Properties of High Conductively Doped Nanocrystalline Silicon Embedded in Amorphous Silicon Carbide

Phosphorous-Doped $\alpha$ -Si Film Crystallization Using Heat-Assisted Femtosecond Laser Annealing

Electron Field Emission of Nanocrystalline Si Prepared by Laser Crystallization

Pulsed excimer laser melting of thin silicon films

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Effects of Heavy Phosphorus-Doping on Mechanical Properties of Czochralski Silicon

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Electrical activation of ion mass doped phosphorous

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

Ultraviolet Laser Activation of Phosphorus‐Doped Polysilicon Layers for Crystalline Silicon Solar Cells

Resistivity Reduction in Heavily Doped Polycrystalline Silicon Using Cw-Laser and Pulsed-Laser Annealing

Low-resistance phosphorus-doped Si films through blue laser diode annealing