Abstract:In this work we report on lead zirconate titanate (PZT) ferroelectric nanestructures fabricated by dip-coating process on silicon substrates covered by nano-porous alumina membranes with pore sizes of 20 nm-100 nm served as templates. Microstructures of the PZT ferroelectric nanostructures were examined by scanning transmission electron microscopy (STEM) with both planar and cross-sectional samples. Cross-sectional TEM images, in conjunction with energy dispersive X-ray elemental analyses revealed the presence of isolated ferroelectric nanastructures imposed by the membrane interiors. Lateral dimensions of the PZT nanostructures can be controlled by the nano-pore sizes of the used alumina membranes. The nano-pores of the alumina membranes were fully penetrated by PZT solution via dip-coating technique, and their interiors were conformally coated by the PZT material with a coating thickness of 4nm-15nm. That was confirmed by the observed lines with dark TEM contrast within the nano-pores. PZT material exists in the manner of continuous medium and/or discrete grains in the channels of nano-pores. Planar STEM images demonstrated that the PZT nanostructures had an oval shape morphology, which was caused by either a local deformation of the nano-pores or shrinkage of PZT solution during the post-annealing process. The ordered FZT nanestructures with a conformal coating thickness of 4 nm-15nm fabricated on Si substrates by dip-coating process, have promising applications in the future, non-volatile ferroelectric random access memories with 3-dimensional structures.

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