Abstract:Amorphous and polycrystalline lead zirconium titanate (PZT) films prepared by means of solgel were etched into different sizes.Compared with the properties of unetched PZT,polarization and endurance properties of PZT were found to degrade after wet etching process.Mechanisms of etching damage were investigated.Phase patterns and surface topologies of PZT were examined,and results show that,non-ferroelectric components are formed in wet etching process,and their permittivity is smaller than that of PZT,which reduces effective applied voltage on the ferroelectric device and causes polarization to decrease.After 1011 fatigue cycles,about 3％ of initial remnant polarization (Pr) is found in unetched PZT.While in etched PZT devices,the Pr loss is more than 5％.Endurance property is found to degrade more severely in smaller devices.The Pr loss in 100 μm × 100 μm PZT device is about 3 times of the value found in 500 μm × 500 μm samples.Defects and vacancies will be generated in wet etching process.At high temperature,they will redistribute and trap more electrons,which will generate internal electric field and pin the domains.Concentrations of defects and vacancies vary with the size of PZT and result in different values of endurance performance.The relationship of piezoelectric parameters and polarization can explain the reason for degradation of piezoelectricity.

Magnetically Enhanced Reactive Ion Etching of Lead Zirconate Titanate Thin Film by CHF3 Plasma

Wet Chemical Etching of Lead Zirconate Titanate Thin Film for Microelectromechanical Systems Applications

Reduction of etching damage in lead–zirconate–titanate thin films with inductively coupled plasma

Synthesis, Microstructure and Properties of Magnetron Sputtered Lead Zirconate Titanate (PZT) Thin Film Coatings

A Two-step Wet Etching Process of PZT Thin Film With Ultra-low Undercut for MEMS Applications

Reactive Ion Etching of Piezoelectric Pb(ZrxTi1−x)O3 in a SF6 Plasma

Reactive ion etching of piezoelectric Pb(Zr[sub x]Ti[sub 1−x])O[sub 3] in a SF[sub 6] plasma

Pulsed Excimer Laser Deposition of Pb(Zr,Ti)O3thin Films on Simox Substrates

Patterning PZT Thin Films using Reactive Ion Beam Etching for PiezoMEMS, RF MEMS Resonator and Filter Applications

Reactive Ion Etching of Sol-Gel derived PZT thin film and Pt/Ti bottom electrode for FRAM

Deep Plasma Etching of Piezoelectric PZT with SF6

Excimer Laser Deposition of C-Axis Oriented Pb(Zr,Ti)O-3 Thin Films on Silicon Substrates with Direct-Current Glow Discharge

Proposed Mechanism for the Improvements of PZT Thin Films Deposited by Direct-Current Glow Discharge Assisted Laser Ablation

Pulsed Excimer Laser Deposition and Rapid Thermal Annealing of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films on Si-on-Insulator

Pulsed Excimer-Laser Deposition and Characterization of Ferroelectric Lead-Zirconate-Titanate Thin-Films

Effect of Wet Etching on Properties of Lead Zirconium Titanate During Integration Process

Recent advances in the deposition of ferroelectric thin films

Electrophoretic Deposition of Pb(Zr, Ti)O-3 Powder on Si Wafer: Morphological Change Across Film Thickness

One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 Nanodot Arrays

Interface Control Of Surface Photochemical Reactivity In Ultrathin Epitaxial Ferroelectric Films

Reactive ion etching of RuO2 thin films using the gas mixture O2/CF3CFH2