Reactive ion etching of RuO2 thin films using the gas mixture O2/CF3CFH2

Wei Pan
DOI: https://doi.org/10.1116/1.587501
1994-11-01
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Abstract:RuO2 thin films were successfully patterned by the reactive ion etching technique in O2/CF3CFH2 using SiO2 films as etch masks. The processing parameters have been optimized. The highest etch rate (1600 Å/min) was obtained by introducing a small amount (2.5%) of CF3CFH2 gas in O2. The etched surfaces were clean and shiny; the etched profiles were anisotropic and smooth. The etch rate ratios of RuO2 to SiO2, Si, and lead zirconate titanate (PZT) were studied as a function of CF3CFH2 gas concentration and the optimized ratios were obtained as 4:1 for RuO2 to SiO2, 14:1 for RuO2 to PZT, and 5:1 for RuO2 to Si. The surface chemistry of RuO2 films etched with different gas compositions was studied by x-ray photoelectron spectroscopy. Based on these experimental data, an etching mechanism is proposed.
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