Abstract:In this work, the reliability of different oxide/4H-SiC interfaces under high temperature and carrier-trapping conditions are investigated carefully. In more detail, the carrier-trapping and temperature effects are considered in the electrical characterization of a low breakdown 4H-SiC-based MOSFET by using in turn SiO2, Si3N4, AlN, Al2O3, Y2O3 and HfO2 as gate dielectric. A gate oxide with a high relative permittivity notably improves the transistor performance. In addition, HfO2 assures the MOSFET best immunity behaviors. The obtained results are explained in terms of the carrier channel mobility, device on-state resistance, and oxide electric field. By using HfO2, however, an increased gate leakage current is calculated. This drawback is overcome by inserting a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. In particular, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, have proven their effectiveness in preserving the transistor on-state figures of merit while limiting the gate leakage current in the whole explored gate voltage range. To support the prediction capabilities of the presented modeling analysis, the simulations results are compared with experimental data from literature resulting in a good agreement. Low power MOSFETs are used in several applications for which reliability and durability are as critical as performance. For example, referring to power optimizers for photovoltaic (PV) modules, which fall under the low-load and low-voltage category of DC–DC converters, these devices significantly increase the energy generated by each single PV module operating under harsh conditions and stressing environments. In addition, they have to ensure high reliability over the long term of operation.

Analyses on High-Temperature Electrical Properties of 4H-Sic N-Mosfet

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Cryogenic and high temperature performance of 4H-SiC power MOSFETs

Reliability Investigation of 4H-Sic MOSFET Based on TCAD Simulation

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation

Analysis and Modeling of Temperature Dependence of I-V behavior in Silicon Carbide MOSFETs

Electrical Performances and Physics Based Analysis of 10kv SiC Power MOSFETs at High Temperatures

High temperature stability evaluation of SiC MOSFETs

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Understanding High Temperature Static and Dynamic Characteristics of 1.2 Kv SiC Power MOSFETs

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

Electrical Characterization of 1.2kv SiC MOSFET at Extremely High Junction Temperature