Abstract:In this work, a semi-analytical compact model of random process fluctuations in nanosheet (NS) gate-all-around (GAA) complementary FET (CFET) is proposed, including work-function variation (WFV), line edge roughness (LER), and gate edge roughness (GER). Different from the conventional NS GAA FET, GER has a significantly different impact on NS GAA CFET, due to the additional p-type work-function (p-WF) liner for p-FET threshold voltage tuning as well as the common metal gate, and a negative correlation with p-WF thickness is introduced into GER model. The proposed model is embedded into Berkeley short-channel insulated-gate field-effect transistor model-common multi-gate (BSIM-CMG) to predict the device performance variability by HSPICE Monte Carlo (MC) simulations. Excellent agreement between stochastic TCAD and HSPICE MC simulations is demonstrated. The effect of process variations on the power-performance-area (PPA) of standard cells (SDCs) and ring oscillator (RO) circuit is predicted by the proposed model. Most of the process variations make a more than −10% to +20% change in power consumption in NOR2. WFV has the greatest impact on RO PPA, making a −10% to +12.3% change in power consumption. The proposed model provides a helpful guideline for the random variation-aware CFET circuit design and related technology process development.

Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors

Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)

Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs

Compact Modeling of Process Variations in Nanosheet Complementary FET (CFET) and Circuit Performance Predictions

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Statistical Variability Analysis In Vertically Stacked Gate All Around Fets At 7 Nm Technology

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Design technique co-optimization approach to GAA FETs for inverter design at advanced technology node

Impact of Random Dipole Fluctuation-Induced Variation on Nanosheet Devices

Impact of Process Fluctuations on Reconfigurable Silicon Nanowire Transistor

Variability investigation of gate-all-around silicon nanowire transistors from top-down approach

Impact of the Figures of Merit (foms) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Impact of Process Fluctuations on RF Small-Signal Parameter of Gate-All-Around Nanosheet Transistor Beyond 3 Nm Node

Impact of Process Variability on Threshold Voltage in Vertically-Stacked Nanosheet TFET

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-On-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Estimation and Compensation of Process Induced Variations in Nanoscale Tunnel Field Effect Transistors (TFETs) for Improved Reliability