Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.

FABRICATION OF QUANTUM DOTS BY WET ETCHING AND STUDY OF SIZE DISTRIBUTION

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Photoluminescence Characteristics of GaAs/AlGaAs Quantum Dot Arrays Fabricated by Dry and Dry-Wet Etching

Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays

Semiconductor Quantum Dots: Synthesis, Properties and Applications

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Pl Study of Qds Manufactured by Visible Light Lithography and Wet Etching

Fabrication of Ultralow-Density Quantum Dots by Droplet Etching Epitaxy

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Fabrication Of Ingaas Quantum Dots With An Underlying Ingaalas Layer On Gaas(100) And High Index Substrates By Molecular Beam Epitaxy

Fabrication and Photoluminescence Investigation of CdSe Quantum Dots

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots

The Study of Individual Free Standing Gaas/Algaas Quantum-Dots by Stem-Cl

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(1 0 0) and high index substrates by molecular beam epitaxy

Theoretical Study of Luminance of Gan Quantum Dots Planted in Quantum Well

Fabrication of InGaAs Quantum Dot 2D-Arrays on GaAs(001) by MBE

Quantum Dots: Growth of InAs Quantum Dots on GaAs (511)A Substrates: the Competition Between Thermal Dynamics and Kinetics (small 31/2016)

Large-scale Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub> quantum dot arrays fabricated by templated catalytic etching

Spatial Ordering of Si/Ge Quantum Dots and Its Fabrication Technology

Uniform Quantum Dot Patterns Fabricated by Soft Lithography