Abstract:Traditional methods for synthesizing InGaN quantum dots (QDs), such as the Stranski-Krastanov growth, often result in QD ensembles with low density and non-uniform size distribution. To overcome these challenges, forming QDs using photoelectrochemical (PEC) etching with coherent light has been developed. Anisotropic etching of InGaN thin films is demonstrated here with PEC etching. InGaN films are etched in dilute H2SO4 and exposed to a pulsed 445 nm laser with a 100 mW/cm2 average power density. Two potentials (0.4 V or 0.9 V) measured with respect to an AgCl|Ag reference electrode are applied during PEC etching, resulting in different QDs. Atomic force microscope images show that while the QD density and sizes are similar for both applied potentials, the heights are more uniform and match the initial InGaN thickness at the lower applied potential. Schrodinger-Poisson simulations show that polarization-induced fields in the thin InGaN layer prevent positively charged carriers (holes) from arriving at the c-plane surface. These fields are mitigated in the less polar planes resulting in high etch selectivity for the different planes. The higher applied potential overcomes the polarization fields and breaks the anisotropic etching.

Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays

Photoluminescence Characteristics of GaAs/AlGaAs Quantum Dot Arrays Fabricated by Dry and Dry-Wet Etching

FABRICATION OF QUANTUM DOTS BY WET ETCHING AND STUDY OF SIZE DISTRIBUTION

Large-scale Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub> quantum dot arrays fabricated by templated catalytic etching

InGaAs Quantum Dot Molecules During Selective Etching Using an in Droplet Mask

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage

Effect of Dry Etching on Light Emission of InAsP/InP SMQWs

Fabrication of InGaAs Quantum Dot 2D-Arrays on GaAs(001) by MBE

Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots

Research Processes in Fabricating Micro-patterned Quantum Dot Films by Solution Processes

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Fabrication of GaN Quantum Dots Using Ga Droplet Epitaxy and Thermal Annealing by Metal Organic Chemical Vapor Deposition

Wetting layers effect on InAs/GaAs quantum dots

Ordered GaAs quantum dots by droplet epitaxy using in situ direct laser interference patterning

Fabrication of highly ordered nanocrystalline Si:H nanodots for the application of nanodevice arrays

Wet etching of GaN, AlN, and SiC: a review

Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

Dry etching of deep air holes in GaAs/AlGaAs-based epi-wafer having InAs quantum dots for fabrication of photonic crystal laser

Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics

Selective Wet Etching of AlGaAs in HF/CrO3 Solutions: Application to Vertical Taper Structures in Integrated Optoelectronic Devices