Abstract:This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE) by employing plasma assisted molecular beam epitaxy. The applied procedure consists of two fabrication stages. During the first stage, the cold substrate (T = 15 °C) is exposed to an impinging In flux, resulting in formation of metallic In droplets on the substrate surface, and then to an impinging active nitrogen flux, resulting in In conversion into polycrystalline InN islands. During the second stage, the substrate, which is still kept exposed to active nitrogen, is heated up to T = 300 °C, to allow for the reorganization of extended polycrystalline InN islands into groups of independent single crystalline wurtzite InN QDs. This work provides a detailed experimental insight into both fabrication stages and their qualitative explanations within the scopes of adatom surface kinetics (stage I) and total energy per unit crystal volume minimization (stage II). Finally, the formation mechanisms of InN QDs on the three different substrates (Si(111), Si(001) and In0.3Ga0.7N/Si(111)) are compared, and also linked to the formation mechanisms of other more studied nanostructures, such as self assembled GaN/AlN QDs and self assembled and selective area grown GaN nanowires.

Fabrication of GaN Quantum Dots Using Ga Droplet Epitaxy and Thermal Annealing by Metal Organic Chemical Vapor Deposition

Fabrication of Gan Nanodots Via Gan Thermal Decomposition in H-2 Atmosphere

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

The Fabrication of GaN Quantum Dots Using Metalorganic Chemical Vapor Deposition

Influence of High-Temperature Postgrowth Annealing under Different Ambience on Gan Quantum Dots Grown Via Ga Droplet Epitaxy

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

The Effects of Post-Thermal Annealing on the Emission Spectra of GaAs/AlGaAs Quantum Dots grown by Droplet Epitaxy

Two-Step Growth of Gan Quantum Dots with Metalorganic Chemical Vapor Deposition

Evolution Mechanism of InGaN Quantum Dots and Their Optical Properties

Metal-Organic-Vapor Phase Epitaxy of Ingan Quantum Dots and Their Applications in Light-Emitting Diodes

A New Method To Fabricate Ingan Quantum Dots By Metalorganic Chemical Vapor Deposition

Optical Performance Improvement of GaN/AlN Quantum Dots Via a Two-Step Grown Caplayer

Structure and Optical Properties of Ge/Si Quantum Dots Formed by Driving the Evolution of Ge Thin Films Via Thermal Annealing

Size-dependent Optical Properties of InGaN Quantum Dots in GaN Nanowires Grown by MBE

Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy

Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots

Effects of in situ Annealing on Optical and Structural Properties of GaN Epilayers Grown by HVPE