Abstract:This thesis describes an extensive study of the optical properties of In(Ga)As/Ga(Al)As quantum dots, both singularly and in laser devices. For the optical characterisation, the spectroscopic techniques of photoluminescence (PL), photoluminescence-excitation (PLE) and electroluminescence (EL) have been used. Additionally, for studying submicron structures, sophisticated micro-PL techniques allowed excitation, and detection, of a single quantum dot. A variety of special growth and fabrication techniques were used to isolate a single quantum dot from the rest of the ensemble. Firstly, a submicron mesa that isolated a single quantum dot was fabricated using e-beam lithography and dry etching techniques. Excitation intensity and wavelength dependence of the emission provided information about the nature of the exciton complexes in the dot and the absorption and relaxation of carriers in the structure. The linewidth of the single exciton, and the variation with temperature, was measured. Secondly, samples consisting of a single layer of InGaAs quantum dots incorporated within the intrinsic region of a GaAs/AlGaAs Metal-Insulator-Semiconductor type Schottky structure allowed sequential dot charging via variation of the gate bias. Both n- and p- type samples, grown under similar conditions, were investigated. Single quantum dots were probed through submicron apertures opened in the top metal contact using electron beam lithography and dry etching. The emission undergoes several pronounced changes as additional carriers are sequentially loaded into the dot. The results reveal direct information regarding Coulomb interaction and correlation effects in dots containing a controlled number of excess electrons (up to four) or holes (up to two). Magneto- optical results reveal further information about the few-particle wave functions. A detailed study of the device performance and physical processes in In(Ga)As- Ga(Al)As self-assembled quantum dot lasers showed that these lasers offer several potential advantages over conventional quantum well lasers including low threshold current density, temperature insensitive threshold current density and high differential gain. Device performance (threshold current density and its variation with temperature) has been studied as a function of a number of parameters, including dot density, dot composition and dot confinement potential. The application of large (<14T) magnetic fields has been used to study carrier transport and dot carrier capture effects. When applied along the growth axis, such fields result in an increase in the threshold current density and a decrease in the external quantum efficiency. These effects are attributed to inhibited inplane carrier transport resulting in an increase in the carrier capture efficiency by non-lasing dots. Spontaneously emitted light, recorded via small windows formed in the top metallic contact, has been studied as a function of injection current and temperature. Analysis of this data provides information on non-radiative loss mechanisms and dot carrier dynamics.

The Study of Individual Free Standing Gaas/Algaas Quantum-Dots by Stem-Cl

Regrowth Dynamics of InAs Quantum Dots on the GaAs Circular Mesa

Optical characterisation of III-V semiconductor quantum dots and quantum dot structures

Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown Via Cycled (inas)n/(gaas)nmonolayer Deposition

Spatially Resolved Luminescence Investigation of Algaas/Gaas Single Quantum Wires Modified by Selective Implantation and Annealing

Changes Of Photoluminescence Of Electron Beam Irradiated Self-Assembled Inas/Gaas Quantum Dots

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots

Fabrication Of Ingaas Quantum Dots With An Underlying Ingaalas Layer On Gaas(100) And High Index Substrates By Molecular Beam Epitaxy

A Study Of Photoluminesence And Structure Character On Aigaas/Gaas Quantum Well Laser Material

Structural, Optical and Intraband Absorption Properties of Vertically Aligned In0.32Ga0.68As/GaAs Quantum Dots Superlattices

FABRICATION OF QUANTUM DOTS BY WET ETCHING AND STUDY OF SIZE DISTRIBUTION

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties

Electron Transport Study of A Lateral Ingaas Quantum Dot

Fabrication And Characterization Of An Undoped Gaas/Algaas Quantum Dot Device

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices

Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots

Photoluminescence Study of InAlAs Quantum Dots Grown on Differently Oriented Surfaces

Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers

Near Infrared Broadband Emission of In0.35ga0.65as Quantum Dots on High Index Gaas Surfaces