Abstract:Group II-VI quantum dots (QDs) possess tunable electrical and optical properties that make them very attractive for high-tech applications and power generation. The effects of proton irradiation on both the structural and physical properties of "giant" CdSe/CdS core-shell QDs (g-CS QDs) are investigated. These experiments shed light on photoelectron delocalization in g-CS QDs, where current linkages and strong variations in optical emission result from the spatial extension of the photoelectron wavefunctions over the conduction bands of CdSe and CdS. Monte Carlo simulations of ion-matter interactions show that the damaging rates can be set from the energy of impinging protons to promote the formation of structural defects in the core or shell. The formation of nanocavities is demonstrated after irradiation doses higher than approximate to 10(17) H+ cm(-2), while a continuous decrease in luminescence intensity is observed for increasing proton fluencies. This feature is accompanied by a concomitant lifetime decrease marking the rise of nonradiative phenomena and the occurrence of greater photocarrier transfers between CdS and CdSe. Current-to-voltage characterizations evidence that proton implantation can be implemented to enhance the photocurrent generation in g-CS QDs. This increase is attributed to the delocalization of photoelectrons in the CdS shell, whose improvement is found to promote electron-hole pair separation.

Changes Of Photoluminescence Of Electron Beam Irradiated Self-Assembled Inas/Gaas Quantum Dots

Optical Properties of Electron Beam and -Ray Irradiated InGaAs/GaAs Quantum Well and Quantum Dot Structures

Effects Of Gaas On Photoluminescence Properties Of Self-Assembled Inas Quantum Dots

The effect of annealing and photoactivation on the optical transitions of band-band and surface trap states of colloidal quantum dots in PMMA.

Observation of Photo Darkening in Self Assembled Ingaas/Gaas Quantum Dots

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Thermal Quenching Of Luminescence From Buried And Surface Ingaas Self-Assembled Quantum Dots With High Sheet Density

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Effect of Growth Interruption on the Optical Properties of InAs/GaAs Quantum Dots

Influence of Size and Surface State Emission on Photoluminescence of CdSe Quantum Dots under UV Irradiation

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Enhanced Photocurrent Generation In Proton-Irradiated "Giant" Cdse/Cds Core/Shell Quantum Dots

Effects Of Internal Strain And External Pressure On Electronic Structures And Optical Transitions Of Self-Assembled Inxga1-Xas/Gaas Quantum Dots: An Experimental And Theoretical Study

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

Tuning Photoluminescence of Single Inas Quantum Dot by Electric Field

Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

The Effects of Post-Thermal Annealing on the Emission Spectra of GaAs/AlGaAs Quantum Dots grown by Droplet Epitaxy