Abstract:This thesis describes an extensive study of the optical properties of In(Ga)As/Ga(Al)As quantum dots, both singularly and in laser devices. For the optical characterisation, the spectroscopic techniques of photoluminescence (PL), photoluminescence-excitation (PLE) and electroluminescence (EL) have been used. Additionally, for studying submicron structures, sophisticated micro-PL techniques allowed excitation, and detection, of a single quantum dot. A variety of special growth and fabrication techniques were used to isolate a single quantum dot from the rest of the ensemble. Firstly, a submicron mesa that isolated a single quantum dot was fabricated using e-beam lithography and dry etching techniques. Excitation intensity and wavelength dependence of the emission provided information about the nature of the exciton complexes in the dot and the absorption and relaxation of carriers in the structure. The linewidth of the single exciton, and the variation with temperature, was measured. Secondly, samples consisting of a single layer of InGaAs quantum dots incorporated within the intrinsic region of a GaAs/AlGaAs Metal-Insulator-Semiconductor type Schottky structure allowed sequential dot charging via variation of the gate bias. Both n- and p- type samples, grown under similar conditions, were investigated. Single quantum dots were probed through submicron apertures opened in the top metal contact using electron beam lithography and dry etching. The emission undergoes several pronounced changes as additional carriers are sequentially loaded into the dot. The results reveal direct information regarding Coulomb interaction and correlation effects in dots containing a controlled number of excess electrons (up to four) or holes (up to two). Magneto- optical results reveal further information about the few-particle wave functions. A detailed study of the device performance and physical processes in In(Ga)As- Ga(Al)As self-assembled quantum dot lasers showed that these lasers offer several potential advantages over conventional quantum well lasers including low threshold current density, temperature insensitive threshold current density and high differential gain. Device performance (threshold current density and its variation with temperature) has been studied as a function of a number of parameters, including dot density, dot composition and dot confinement potential. The application of large (<14T) magnetic fields has been used to study carrier transport and dot carrier capture effects. When applied along the growth axis, such fields result in an increase in the threshold current density and a decrease in the external quantum efficiency. These effects are attributed to inhibited inplane carrier transport resulting in an increase in the carrier capture efficiency by non-lasing dots. Spontaneously emitted light, recorded via small windows formed in the top metallic contact, has been studied as a function of injection current and temperature. Analysis of this data provides information on non-radiative loss mechanisms and dot carrier dynamics.

Optical Properties of Electron Beam and -Ray Irradiated InGaAs/GaAs Quantum Well and Quantum Dot Structures

Changes Of Photoluminescence Of Electron Beam Irradiated Self-Assembled Inas/Gaas Quantum Dots

Electron radiation effects on InAs/GaAs quantum dot lasers

Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb

A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation

Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication

Effect of Growth Interruption on the Optical Properties of InAs/GaAs Quantum Dots

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

Optical characterisation of III-V semiconductor quantum dots and quantum dot structures

Γ-Ray Radiation Effect on InGaAsP Multi-Quantum Well Laser Diodes and Its Component

Robust electrical characteristics of multiple-layer InAs/GaAs quantum-dot diodes under gamma irradiation

Quantum Dot Behaviour under the Influence of Non-Resonant Structured Laser Beams

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Controlled Optical Properties of GaSb/InGaAs Type-Ii Quantum Dots Grown on InP Substrate

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Enhanced Optical Properties of the Gaasn/Gaas Quantum-Well Structure by the Insertion of Inas Monolayers

Radiation tolerant DC characteristics of InAs/GaAs quantum-dot diodes

Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters

Observation of Photo Darkening in Self Assembled Ingaas/Gaas Quantum Dots

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures versus Quantum Well Compositions

Optical Studies of InAs Quantum Dots in III-V Semiconductors