Abstract:InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0 degrees, 2 degrees and 15 degrees towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0 degrees, 2 degrees and 15 degrees misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0 degrees case. An extra emission was observed from the 2 degrees and 15 degrees off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0 degrees surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures.

Photoluminescence Study of InAlAs Quantum Dots Grown on Differently Oriented Surfaces

Structural and Optical Characterization of Inas Nanostructures Grown on (001) and High Index Inp Substrates

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(1 0 0) and high index substrates by molecular beam epitaxy

Structural and Photoluminescence Properties of In0.9(Ga/Al)0.1As Self-Assembled Quantum Dots on InP Substrate

Photoluminescence Properties of Self-Assembled Inas Quantum Dots Grown on Inp Substrates by Solid Source Molecular Beam Epitaxy

The Structural and Photoluminescence Properties of Self-Organized Quantum Dots in Inas/In0.53ga0.47as Multilayer on Inp Substrate

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Inas Self-Assembled Quantum Dots Grown On An Inp (311)B Substrate By Molecular Beam Epitaxy

Substrate Dependence of Ingaas Quantum Dots Grown by Molecular Beam Epitaxy

Red Luminesecnce from Self-Assembled InAlAs/AlGaAs Quantum Dots with Bimodal Size Distribution

Structural and Optical Characteristics of Self-Organized InAs Quantum Dots Grown on GaAs (311)A Substrates

Structural and Optical Properties of Self-Assembled InAs Quantum Dots Grown on GaAs (311) A Substrate

Influence of Substrate Orientation on In0.5ga0.5as/Gaas Quantum Dots Grown by Molecular Beam Epitaxy

Near Infrared Broadband Emission of In0.35ga0.65as Quantum Dots on High Index Gaas Surfaces

Photoluminescence of InAs Self-Organized Quantum Dots Formation on InP Substrate by MOCVD

Two-dimensional Ordering of Self-Assembled InxGa1−xAs Quantum Dots Grown on GaAs(311)B Surfaces

Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots

Fabrication Of Ingaas Quantum Dots With An Underlying Ingaalas Layer On Gaas(100) And High Index Substrates By Molecular Beam Epitaxy

Influence of Substrate Misorientation on the Photoluminescence and Structural Properties of InGaAs/GaAsP Multiple Quantum Wells.

AFM and Raman Scattering Study of InAlAs Quantum Dots

Optical Characterization of InAs Monolayer Quantum Structures Grown on (311)A, (311)B, and (100) GaAs Substrates