Abstract:Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.

Spatial Ordering of Si/Ge Quantum Dots and Its Fabrication Technology

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Large-scale Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub> quantum dot arrays fabricated by templated catalytic etching

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Research Progress on the Growth of Ge/Si Quantum Dot

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

Towards Controllable Growth of Self-Assembled Sige Single and Double Quantum Dot Nanostructures

Circularly Organized Quantum Dot Nanostructures of Ge on Si Substrates

Toward Precise Site-Controlling of Self-Assembled Ge Quantum Dots on Si Microdisks.

Three-dimensional Si/Ge quantum dot crystals

Tailoring the Interfacial Structure of Colloidal "giant" Quantum Dots for Optoelectronic Applications.

Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices

Fabrication of highly ordered nanocrystalline Si:H nanodots for the application of nanodevice arrays

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

A Two-Stage Molecular Beam Epitaxial Growth Method to Fabricate Small and Uniform Ge Quantum Dots on Si(1 0 0)

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Ordering of low-density Ge quantum dot on patterned Si substrate

Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique