Abstract:Vacuum UV spectroscopic ellipsometry (VUV SE) was developed with a multichannel detection system. This system can cover up to 8.5 eV with brief nitrogen purge through optical path. We applied this technique to the characterization of zirconium oxide (ZrO2) films for which the conventional spectroscopic ellipsometer fails due to the poor sensitivity. ZrO2 is one of the high-k dielectrics which can be used for the storage capacitor in dynamic random access memory devices. However, due to the large leakage current of ZrO2, thin layer of aluminum oxide (Al2O3) is sandwiched between two ZrO2 layers forming 'ZrO2(top)/Al2O3/ZrO2(bottom)'. This structure also prevents the reaction between Al2O3 and electrodes during deposition. As overall thickness of this structure is less than 10 nm, the thickness and the properties of each layer need to be controlled precisely in order to fabricate a well-defined capacitor. However, the optical properties of ZrO2 films are highly dependent on the preparation process and conditions. Thus, many considerations are required for the analysis of VUV SE data. Through the complicated analysis, we find that the optical properties of the bottom ZrO2 film are dependent on its own thickness as well as the deposition temperature for the subsequent Al2O3 layer. Moreover, those of the top ZrO2 layer showed the dependence on the crystalline structure of the bottom ZrO2 along with the thickness of interfacial Al2O3 layer.

Development of vacuum ultraviolet multichannel ellipsometry and its application to the characterization of ultrathin zirconium oxide films

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

X-ray Diffraction and Electrical Characterization of Photo-Cvd Zirconium Oxide Layers

WELL-BEHAVED METAL-OXIDE-SEMICONDUCTOR CAPACITOR CHARACTERISTICS OF ZIRCONIUM OXIDE FILMS FABRICATED BY SURFACE SOL-GEL PROCESS

Mechanical Properties Of Zirconia Thin Films Deposited By Filtered Cathodic Vacuum Arc

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Interfacial and microstructural properties of zirconium oxide thin films prepared directly on silicon

Photoformation of Zirconium Oxide at Low Temperatures

Deposition of high k ZrO/sub 2/ thin films by high vacuum electron beam evaporation at room temperature

Formation of High-Quality Advanced High-K Oxide Layers at Low Temperature by Excimer Uv Lamp-Assisted Photo-Cvd and Sol-Gel Processing

Study of ZnS_xSe_(1-x) Thin Films for Ultraviolet LCLV in Transmission Mode

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

The Thickness-Dependent Band Gap and Defect Features of Ultrathin ZrO2 Films Studied by Spectroscopic Ellipsometry.

Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

Electrical levels of defect investigation of Zr O2 thin film by spectroscopic ellipsometry

Deposition Of High K Zro2 Thin Films By High Vacuum Electron Beam Evaporation At Room Temperature

High-Quality ZrO2 Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

Room Temperature deposition of ZnO and Al:ZnO ultrathin films on glass and PET substrates by DC sputtering Technique

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition

Structure and Dielectric Properties of Ultra-Thin ZrO2 Films for High- K Gate Dielectric Application Prepared by Pulsed Laser Deposition