Research on the electro-magnetic protection technique of SCB bridge based on vertical punch through PN junction

Hui Li,Chunyang Feng,Jianjun Luo,Wei Ren,Huiyuan Niu,Yingke Chang,Jiao Li

DOI: https://doi.org/10.1063/5.0191824

IF: 1.697

2024-02-01

AIP Advances

Abstract:Pyrotechnic device is the key initiating component of weapon system, and its function reliability will directly affect the triggering of detonation and actuation mechanism. In order to enhance the survival ability of pyrotechnic device in intricate electromagnetic interference environment, it is necessary to carry out in-depth research on the electromagnetic protection technique of pyrotechnic device. In this paper, a new electromagnetic protection circuit based on vertical punch through PN junction device is proposed, which monolithically integrates the circuit with polysilicon semiconductor bridge on a single chip. The Electro-static Discharge (ESD) test was carried out according to the method specified by standard electrostatic standard 500 pF/500 Ω/25 kV, and the ESD capability of the proposed new chip was not less than 25 kV. Compared with the electromagnetic protection circuit by transient voltage suppressor diode based on lateral punch through junction device structure, the new chip increases the effective junction area of PN junction, reduces the current density, and increases the current conduction ability and electrostatic roughness of the diode. The new chip has a larger diode effective junction capacitance, which not only improves the ESD capability but also improves the RF protection capability at the same time.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

The paper attempts to address the issue of improving the anti-static and anti-radio frequency capabilities of pyrotechnic devices (especially Semiconductor Bridge, SCB) in complex electromagnetic interference environments. As a critical triggering component of weapon systems, the functional reliability of pyrotechnic devices directly affects the triggering of detonation and action mechanisms. With the increasing significance of electrostatic discharge hazards and the deterioration of the electromagnetic environment, the small energy ignition semiconductor bridge is increasingly affected by static electricity and electromagnetic waves, which may lead to premature explosions or product performance degradation (such as ignition delay, insensitivity, etc.). Therefore, technical measures need to be taken to further enhance its anti-static and anti-radio frequency capabilities.

To achieve this goal, the paper proposes a new electromagnetic protection circuit scheme based on a vertical penetration PN junction, which realizes monolithic integration with a polysilicon semiconductor bridge on a single chip. By increasing the effective junction area, reducing current density, improving current conduction capability and electrostatic tolerance, and simultaneously increasing the effective junction capacitance of the PN junction, the RF protection capability is enhanced. Experiments have verified that the ESD capability of this new chip is not less than 25kV, and it performs well in electrostatic tests under the 500pF/500Ω/25kV standard, proving the feasibility of the scheme.